參數(shù)資料
型號: PBSS4350S
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: KPTC 3C 3#20 SKT PLUG
中文描述: 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 79K
代理商: PBSS4350S
2001 Nov 19
2
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350S
FEATURES
High power dissipation (830 mW)
Ultra low collector-emitter saturation voltage
3 A continuous current
High current switching
Improved device reliability due to reduced heat
generation
APPLICATIONS
Medium power switching and muting
Linear regulators
DC/DC convertor
Supply line switching circuits
Battery management applications
Strobe flash units
Heavydutybatterypoweredequipment(motorandlamp
drivers).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT54 plastic package.
PNP complement: PBSS5350S.
MARKING
TYPE NUMBER
MARKING CODE
PBSS4350S
S4350S
PINNING
PIN
DESCRIPTION
1
2
3
base
collector
emitter
handbook, halfpage
1
3
2
MAM259
2
1
3
Fig.1
Simplified outline (SOT54) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
I
C
I
CM
R
CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
50
3
5
<145
V
A
A
m
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
60
50
6
3
5
1
830
+150
150
+150
V
V
V
A
A
A
mW
°
C
°
C
°
C
T
amb
25
°
C; note 1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS4350S,126 功能描述:兩極晶體管 - BJT TRANS BISS AMMO LARGE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4350SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:50 V low VCEsat NPN transistor
PBSS4350SPN 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
PBSS4350SPN T/R 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4350SPN,115 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2