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參數(shù)資料
| 型號(hào)： | PB58CE |
| 廠商： | CIRRUS LOGIC INC |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, MBFM8 |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, TO-3, 8 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 411K |
| 代理商： | PB58CE |
P r o d u c t I n n o v a t i o n F r o m
PB58 PB58A
2
PB58U
SUPPLY VOLTAGE, +V
S to –VS
300V
OUTPUT CURRENT, within SOA
2.0A
POWER DISSIPATION, internal at T
C = 25°C
1
83W
INPUT VOLTAGE, referred to COM
±15V
TEMPERATURE, pin solder—10 sec max
300°C
TEMPERATURE, junction1
175°C
TEMPERATURE, storage
–65 to +150°C
OPERATING TEMPERATURE RANGE, case
–55 to +125°C
SPECIFICATIONS
ABSOLUTEMAXIMUMRATINGS
PB58
PB58A
PARAMETER
TEST CONDITIONS2
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
±.75
±1.75
*
±1.0
V
OFFSET VOLTAGE, vs. temperature
Full temperature range3
–4.5
–7
*
mV/°C
INPUT IMPEDANCE, DC
25
50
*
kΩ
INPUT CAPACITANCE
3
*
pF
CLOSED LOOP GAIN RANGE
3
10
25
*
V/V
GAIN ACCURACY, internal Rg, Rf
A
V = 3
±10
±15
*
%
GAIN ACCURACY, external Rf
A
V = 10
±15
±25
*
%
PHASE SHIFT
f = 10kHz, AV
CL = 10, CC = 22pF
10
*
°
f = 200kHz, AV
CL = 10, CC = 22pF
60
*
°
OUTPUT
VOLTAGE SWING
Io = 1.5A (PB58), 2A (PB58A)
V
S–11
V
S –8
V
S–15
V
S–11
V
VOLTAGE SWING
Io = 1A
V
S–10
V
S –7
*
V
VOLTAGE SWING
Io = .1A
V
S–8
V
S –5
*
V
CURRENT, continuous
1.5
2.0
A
SLEW RATE
Full temperature range
50
100
75
*
V/s
CAPACITIVE LOAD
Full temperature range
2200
*
pF
SETTLING TIME to .1%
R
L = 100Ω, 2V step
2
*
s
POWER BANDWIDTH
V
C = 100 Vpp
160
320
240
*
kHz
SMALL SIGNAL BANDWIDTH
C
C = 22pF, AV = 25, Vcc = ±100
100
*
kHz
SMALL SIGNAL BANDWIDTH
C
C = 22pF, AV = 3, Vcc = ±30
1
*
MHz
POWER SUPPLY
VOLTAGE, ±V
S
4
Full temperature range
±156
±60
±150
*
V
CURRENT, quiescent
V
S = ±15
11
*
mA
V
S = ±60
12
*
mA
V
S = ±150
14
18
*
mA
THERMAL
RESISTANCE, AC junction to case5
Full temp. range, f > 60Hz
1.2
1.3
*
°C/W
RESISTANCE, DC junction to case
Full temp. range, f < 60Hz
1.6
1.8
*
°C/W
RESISTANCE, junction to air
Full temperature range
30
*
°C/W
TEMPERATURE RANGE, case
Meets full range specifications
–25
25
85
*
°C
NOTES: *
The specification of PB58A is identical to the specification for PB58 in applicable column to the left.
1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF (Mean Time to Failure).
2. The power supply voltage specified under typical (TYP) applies, T
C = 25°C unless otherwise noted.
3. Guaranteed by design but not tested.
4. +V
S and –VS denote the positive and negative supply rail respectively.
5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
6. +V
S/–VS must be at least 15V above/below COM.
The PB58 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
CAUTION
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