
APEX MICROTECHNOLOGY CORPORATION
5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PB58 PB58A
SUPPLY VOLTAGE, +V
to –V
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at T
C
= 25
°
C
1
INPUT VOLTAGE, referred to COM
TEMPERATURE, pin solder—10 sec max
TEMPERATURE, junction
1
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
300V
2.0A
83W
±
15V
300
°
C
175
°
C
–65 to +150
°
C
–55 to +125
°
C
SPECIFICATIONS
PB58
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
2
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
CLOSED LOOP GAIN RANGE
GAIN ACCURACY, internal Rg, Rf
GAIN ACCURACY, external Rf
PHASE SHIFT
±
.75
–4.5
50
3
10
±
10
±
15
10
60
±
1.75
–7
*
*
*
*
*
*
*
*
*
±
1.0
*
V
Full temperature range
3
mV/
°
C
k
pF
V/V
%
%
°
°
25
*
3
25
±
15
±
25
*
*
*
*
A
V
= 3
A
= 10
f = 10kHz, AV
CL
= 10, C
C
= 22pF
f = 200kHz, AV
CL
= 10, C
C
= 22pF
OUTPUT
VOLTAGE SWING
VOLTAGE SWING
VOLTAGE SWING
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD
SETTLING TIME to .1%
POWER BANDWIDTH
SMALL SIGNAL BANDWIDTH
SMALL SIGNAL BANDWIDTH
Io = 1.5A (PB58), 2A (PB58A)
Io = 1A
Io = .1A
V
S
–11
V
S
–10
V
–8
1.5
50
V
S
–8
V
S
–7
V
S
–5
V
S
–15
*
*
2.0
75
V
S
–11
*
*
V
V
V
A
Full temperature range
Full temperature range
R
L
= 100
, 2V step
V
C
= 100 Vpp
C
C
= 22pF, A
V
= 25, Vcc =
±
100
C
C
= 22pF, A
V
= 3, Vcc =
±
30
100
2200
2
320
100
1
*
*
*
*
*
*
V/
μ
s
pF
μ
s
kHz
kHz
MHz
160
240
POWER SUPPLY
VOLTAGE,
±
V
S4
CURRENT, quiescent
Full temperature range
V
S
=
±
15
V
S
=
±
60
V
S
=
±
150
±
15
6
±
60
11
12
14
±
150
*
*
*
*
*
*
V
mA
mA
mA
18
*
THERMAL
RESISTANCE, AC junction to case
5
RESISTANCE, DC junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temp. range, f > 60Hz
Full temp. range, f < 60Hz
Full temperature range
Meets full range specifications
1.2
1.6
30
25
1.3
1.8
*
*
*
*
*
*
°
C/W
°
C/W
°
C/W
°
C
–25
85
*
*
NOTES:
*
The specification of PB58A is identical to the specification for PB58 in applicable column to the left.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF (Mean Time to Failure).
The power supply voltage specified under typical (TYP) applies, T
C
= 25
°
C unless otherwise noted.
Guaranteed by design but not tested.
+V
and –V
denote the positive and negative supply rail respectively.
Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
+V
S
/–V
S
must be at least 15V above/below COM.
1.
2.
3.
4.
5.
6.
PB58A
The PB58 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850
°
C to avoid generating toxic fumes.
CAUTION