參數(shù)資料
型號(hào)： PB50
廠商： Electronic Theatre Controls, Inc.
英文描述： POWER BOOSTER AMPLIFIER
中文描述： 功率增強(qiáng)放大器
文件頁數(shù)： 2/4頁
文件大?。?/td> 57K
代理商： PB50
APEX MICROTECHNOLOGY CORPORATION
5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
PB50
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V
to –V
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at T
= 25
°
C
1
INPUT VOLTAGE, referred to common
TEMPERATURE, pin solder—10 sec max
TEMPERATURE, junction
1
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
200V
2A
35W
±
15V
300
°
C
150
°
C
–65 to +150
°
C
–55 to +125
°
C
SPECIFICATIONS
PARAMETER
TEST CONDITIONS
2
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
CLOSED LOOP GAIN RANGE
GAIN ACCURACY, internal Rg, Rf
GAIN ACCURACY, external Rf
PHASE SHIFT
±
.75
–4.5
50
3
10
±
10
±
15
10
60
±
1.75
–7
V
Full temperature range
mV/
°
C
k
pF
V/V
%
%
°
°
25
3
25
±
15
±
25
A
V
= 3
A
= 10
F = 10kHz, AV
CL
= 10, C
C
= 22pF
F = 200kHz, AV
CL
= 10, C
C
= 22pF
OUTPUT
VOLTAGE SWING
VOLTAGE SWING
VOLTAGE SWING
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD
SETTLING TIME to .1%
POWER BANDWIDTH
SMALL SIGNAL BANDWIDTH
SMALL SIGNAL BANDWIDTH
Io = 2A
Io = 1A
Io = .1A
V
S
–11
V
S
–10
V
S
–8
2
50
V
S
–9
V
S
–7
V
S
–5
V
V
V
A
Full temperature range
Full temperature range
R
L
= 100
, 2V step
V
C
= 100Vpp
C
C
= 22pF, A
V
= 25, Vcc =
±
100
C
C
= 22pF, A
V
= 3, Vcc =
±
30
100
2200
2
320
100
1
V/
μ
s
pF
μ
s
kHz
kHz
MHz
160
POWER SUPPLY
VOLTAGE,
±
V
S3
CURRENT, quiescent
Full temperature range
V
S
=
±
30
V
S
=
±
60
V
S
=
±
100
±
30
5
±
60
9
12
17
±
100
12
18
25
V
mA
mA
mA
THERMAL
RESISTANCE, AC junction to case
4
RESISTANCE, DC junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temp. range, F > 60Hz
Full temp. range, F < 60Hz
Full temperature range
Meets full range specifications
1.8
3.2
30
25
2.0
3.5
°
C/W
°
C/W
°
C/W
°
C
–25
85
NOTES: 1.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF (Mean Time to Failure).
The power supply voltage specified under typical (TYP) applies, T
= 25
°
C unless otherwise noted.
+V
and –V
denote the positive and negative supply rail respectively.
Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
+V
S
must be at least 15V above COM, –V
S
must be at least 30V below COM.
2.
3.
4.
5.
The PB50 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850
°
C to avoid generating toxic fumes.
CAUTION
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