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CALIFORNIA MICRO DEVICES
PACDN005
2000 California Micro Devices Corp. All rights reserved.
215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
2
2/00
STANDARD SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Channel clamp current (continuous)
Operating Temperature
Storage Temperature
Package Power Rating
Symbol
V
DD
I
clamp
Rating
-0.3V to +7V
±50mA
0
O
C to 70
O
C
-65
O
C to +150
O
C
1.00W, max.
Tstg
Parameter
Diode foward voltage
Conditions
To V
DD
Min
Typ
0.55V
0.70V
0.50V
0.65V
Max
0.70V
0.90V
0.65V
0.85V
<400pS
5μA
I
F
= 16 mA
I
F
= 50 mA
I
F
= 16 mA
I
F
= 50 mA
0.55V
From GND
0.50V
Reverse Recovery Time (See Note 1)
Channel leakage
Input Capacitance
ESD Protection
I
F
= 50mA (estimated)
0
≤
V
IN
≤
V
DD
f = 1 MHz, V
IN
= 2.5V, T
A
= 25
O
C, V
DD
= 5.0V
MIL-STD-883, Method 3015
0.1μA
5pF
4KV
The absolute maximum ratings are limiting values, to be applied individually, beyond which the device may be permanently damaged. Functional
operation under any of these conditions is not guaranteed. Exposing the device to its absolute maximum rating may
affect its reliability.
Package
Ordering Part Number
Tubes
PACDN005Q/T
PACDN005S/T
Pins
24
24
Style
QSOP
Tape & Reel
PACDN005Q/R
PACDN005S/R
Part Marking
PACDN005Q
PACDN005S
SOIC Wide
STANDARD PART ORDERING INFORMATION
Note 1:
The test circuit depicts the Schottky diodes in their typical application. The impact of a reverse recovery time is measured
using a narrow pulse with 670- pS rise and fall times. This pulse propagates down a 60 cm, 54 ohm strip line fabricated on
a multi-layer, controlled impedance printed circuit board. In testing the ground clamp diode, the negative going edge of the
pulse causes a reflection which forces the diode under test to become forward biased. The positive going edge of the pulse
attempts to pull this diode out of forward conduction. A reverse recovery phenomenon would cause a delay between the
known arrival time of the positive edge and the observed edge due to the time it takes for the forward biased diode to actually
become reversed biased. In this measurement, however, there is no observable difference and therefore no delay for the
positive edge due to the presence of the diode. The waveforms are adjusted to individually test the ground and V
DD
clamps.
See test circuit.
Test Circuit. Line length, pulse width and duty cycle are selected such as that only one reflection is involved
in the measurement.
V
Diode
under
test
DD
Z , L
0
ABT16244A
Pulse
Generator
DIODE CHARACTERISTICS (T
A
= 0
O
to 70
O
C)