參數(shù)資料
型號： PA28F400BX-T80
廠商： INTEL CORP
元件分類： PROM
英文描述： 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 256K X 16 FLASH 12V PROM, 80 ns, PDSO40
封裝： 1.110 X 0.525 INCH, PLASTIC, SOP-40
文件頁數(shù)： 47/50頁
文件大?。?/td> 559K
代理商： PA28F400BX-T80
28F400BX-T/B, 28F004BX-T/B
AC CHARACTERISTICSDCE
Y
-CONTROLLED WRITE OPERATIONS
(1, 9)
(Continued)
Versions
V
CC
g
5%
28F400BX-60
(10)
28F004BX-60
(10)
Unit
V
CC
g
10%
28F400BX-60
(11)
28F004BX-60
(11)
28F400BX-80
(11)
28F004BX-80
(11)
28F400BX-120
(11)
28F004BX-120
(11)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
IR
Input Rise Time
10
10
10
10
ns
t
IF
Input Fall Time
10
10
10
10
ns
NOTES:
1. Chip-Enable Controlled Writes: Write operations are driven by the valid combination of CE
Y
and WE
Y
in systems where
CE
Y
defines the write pulse-width (within a longer WE
Y
timing waveform), all set-up, hold and inactive WE
Y
times
should be measured relative to the CE
Y
waveform.
2, 3, 4, 5, 6, 7, 8: Refer to AC Characteristics notes for WE
Y
-Controlled Write Operations.
9. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
Characteristics during Read Mode.
10. See High Speed Test Configuration.
11. See Standard Test Configuration.
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICSDCE
Y
-CONTROLLED WRITE OPERATIONS
(1, 9)
Versions
T28F400BX-80
(10)
T28F004BX-80
(10)
Unit
Symbol
Parameter
Notes
Min
Max
t
AVAV
t
PHEL
t
WLEL
t
PHHEH
t
VPEH
t
AVEH
t
DVEH
t
ELEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHQV1
t
WC
t
PS
t
WS
t
PHS
t
VPS
t
AS
t
DS
t
CP
t
DH
t
AH
t
WH
t
CPH
Write Cycle Time
80
ns
RP
Y
High Recovery to CE
Y
Going Low
220
ns
WE
Y
Setup to CE
Y
Going Low
0
ns
RP
Y
V
HH
Setup to CE
Y
Going High
V
PP
Setup to CE
Y
Going High
Address Setup to CE
Y
Going High
6, 8
100
ns
5, 8
100
ns
3
60
ns
Data Setup to CE
Y
Going High
4
60
ns
CE
Y
Pulse Width
60
ns
Data Hold from CE
Y
High
4
0
ns
Address Hold from CE
Y
High
3
10
ns
WE
Y
Hold from CE
Y
High
10
ns
CE
Y
Pulse Width High
20
ns
Duration of Word/Byte Programming
Operation
2, 5
7
m
s
47
相關(guān)PDF資料
PDF描述
PA28F400CV-B80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400CV-T60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400CV-T80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400BL-T150 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
PA28F400BV-T60 POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PA28F400CV-B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400CV-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400CV-T60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400CV-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F800B5B70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*