• 參數(shù)資料
    型號(hào): PA28F200CV-T60
    廠商: Intel Corp.
    英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
    中文描述: 2兆位SmartVoltage啟動(dòng)塊閃存系列
    文件頁數(shù): 11/48頁
    文件大小: 562K
    代理商: PA28F200CV-T60
    28F200BX-T/B, 28F002BX-T/B
    2.1 28F200BX Memory Organization
    2.1.1 BLOCKING
    The 28F200BX uses a blocked array architecture to
    provide independent erasure of memory blocks. A
    block is erased independently of other blocks in the
    array when an address is given within the block ad-
    dress range and the Erase Setup and Erase Confirm
    commands are written to the CUI. The 28F200BX is
    a random read/write memory, only erasure is per-
    formed by block.
    2.1.1.1 Boot Block Operation and Data
    Protection
    The 16-Kbyte boot block provides a lock feature for
    secure code storage. The intent of the boot block is
    to provide a secure storage area for the kernel code
    that is required to boot a system in the event of pow-
    er failure or other disruption during code update.
    This lock feature ensures absolute data integrity by
    preventing the boot block from being written or
    erased when RP
    Y
    is not at 12V. The boot block can
    be erased and written when RP
    Y
    is held at 12V for
    the duration of the erase or program operation. This
    allows customers to change the boot code when
    necessary while providing security when needed.
    See the Block Memory Map section for address
    locations of the boot block for the 28F200BX-T
    and 28F200BX-B.
    2.1.1.2 Parameter Block Operation
    The 28F200BX has 2 parameter blocks (8 Kbytes
    each). The parameter blocks are intended to provide
    storage for frequently updated system parameters
    and configuration or diagnostic information. The pa-
    rameter blocks can also be used to store additional
    boot or main code. The parameter blocks however,
    do not have the hardware write protection feature
    that the boot block has. The parameter blocks pro-
    vide for more efficient memory utilization when deal-
    ing with parameter changes versus regularly blocked
    devices. See the Block Memory Map section for ad-
    dress locations of the parameter blocks for the
    28F200BX-T and 28F200BX-B.
    2.1.1.3 Main Block Operation
    Two main blocks of memory exist on the 28F200BX
    (1 x 128 Kbyte block and 1 x 96-Kbyte block). See
    the following section on Block Memory Map for the
    address location of these blocks for the 28F200BX-T
    and 28F200BX-B products.
    2.1.2 BLOCK MEMORY MAP
    Two versions of the 28F200BX product exist to sup-
    port two different memory maps of the array blocks
    in order to accommodate different microprocessor
    protocols for boot code location. The 28F200BX-T
    memory map is inverted from the 28F200BX-B
    memory map.
    2.1.2.1 28F200BX-B Memory Map
    The 28F200BX-B device has the 16-Kbyte boot
    block located from 00000H to 01FFFH to accommo-
    date those microprocessors that boot from the bot-
    tom of the address map at 00000H. In the
    28F200BX-B the first 8-Kbyte parameter block re-
    sides in memory space from 02000H to 02FFFH.
    The second 8-Kbyte parameter block resides in
    memory space from 03000H to 03FFFH. The
    96-Kbyte main block resides in memory space from
    04000H to 0FFFFH. The 128-Kbyte main block re-
    sides in memory space from 10000H to 1FFFFH
    (word locations). See Figure 7.
    (Word Addresses)
    1FFFFH
    128-Kbyte MAIN BLOCK
    0FFFFH
    10000H
    96-Kbyte MAIN BLOCK
    03FFFH
    04000H
    8-Kbyte PARAMETER BLOCK
    02FFFH
    03000H
    8-Kbyte PARAMETER BLOCK
    01FFFH
    02000H
    16-Kbyte BOOT BLOCK
    00000H
    Figure 7. 28F200BX-B Memory Map
    11
    相關(guān)PDF資料
    PDF描述
    PA28F200CV-T80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
    PA28F200BL-T150 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
    PA28F200BV-T80 POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90%
    PA28F200BV-B60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
    PA28F200BV-B80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    PA28F200CV-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
    PA28F400B5B60 制造商:Intel 功能描述:
    PA28F400B5B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
    PA28F400B5T60 制造商:Intel 功能描述:
    PA28F400B5T80 制造商:Intel 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 80ns 44-Pin SOP