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| 型號： | PA28F016SC-95 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
| 中文描述： | 2M X 8 FLASH 3.3V PROM, 95 ns, PDSO44 |
| 封裝： | 13.30 X 28.20 MM, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 39/42頁 |
| 文件大?。?/td> | 725K |
| 代理商： | PA28F016SC-95 |
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E
6.7
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
39
PRELIMINARY
Block Erase, Program, and Lock-Bit Configuration Performance
(3, 4, 5)
—
Commercial Temperature
V
CC
= 3.3 V ± 0.3 V, T
A
= 0°C to +70°C
3.3 V V
PP
5 V V
PP
12 V V
PP
#
Sym
Parameter
Program Time
Notes
2
Typ
(1)
19
Max
300
Typ
(1)
10
Max
150
Typ
(1)
7
Max
125
Unit
μs
W16 t
WHRH1
,
t
EHRH1
Block Write Time
Block Erase Time
2
2
1.2
0.8
4
6
0.7
0.4
2
5
0.5
0.3
1.5
4
sec
sec
W16 t
WHRH2
,
t
EHRH2
W16 t
WHRH3
,
t
EHRH3
W16 t
WHRH4
,
t
EHRH4
W16 t
WHRH5
,
t
EHRH5
Set Lock-Bit Time
2
21
TBD
13.3
TBD
11.6
TBD
μs
Clear Block Lock-
Bits Time
Program Suspend
Latency Time to
Read
Erase Suspend
Latency Time to
Read
2
1.8
TBD
1.2
TBD
1.1
TBD
sec
7.1
10
6.6
9.3
7.4
10.4
μs
W16 t
WHRH6
,
t
EHRH6
15.2
21.1
12.3
17.2
12.3
17.2
μs
V
CC
= 5 V ± 5%, 5 V ± 10%, T
A
= 0°C to +70°C
5 V V
PP
12 V V
PP
#
Sym
Parameter
Notes
2
Typ
(1)
Max
8
Typ
(1)
Max Unit
6
100
W16 t
WHRH1
,
t
EHRH1
Program Time
150
μs
Block Write Time
Block Erase Time
2
2
0.5
0.4
1.5
5
0.4
0.3
1
4
sec
sec
W16 t
WHRH2
,
t
EHRH2
W16 t
WHRH3
,
t
EHRH3
W16 t
WHRH4
,
t
EHRH4
W16 t
WHRH5
,
t
EHRH5
W16 t
WHRH6
,
t
EHRH6
NOTES:
1.
Typical values measured at T
= +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2.
Excludes system-level overhead.
3.
These performance numbers are valid for all speed versions.
4.
Sampled, but not 100% tested.
5.
Reference the
AC Waveform for Write Operations
, Figure 19.
Set Lock-Bit Time
2
12
TBD
10
TBD
μs
Clear Block Lock-Bits Time
2
1.1
TBD
1.0
TBD sec
Program Suspend Latency Time to
Read
Erase Suspend Latency Time to
Read
5.6
7
5.2
7.5
μs
9.4
13.1
9.8
12.6
μs
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