參數(shù)資料
型號: PA28F008S3-150
廠商: INTEL CORP
元件分類: PROM
英文描述: BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述: 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO44
封裝: 13.30 X 28.20 MM, PLASTIC, SOP-44
文件頁數(shù): 30/41頁
文件大?。?/td> 703K
代理商: PA28F008S3-150
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY
E
30
PRELIMINARY
6.4
DC Characteristics
—Commercial Temperature
2.7 V V
CC
3.3 V V
CC
Test
Sym
Parameter
Notes Typ
Max
Typ
Max
Unit
Conditions
I
LI
Input Load Current
1
±
0.5
±
0.5
μ
A
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
OUT
= V
CC
or GND
CMOS Inputs
V
CC
= V
CC
Max
CE# = RP# = V
CC
± 0.2 V
TTL Inputs
V
CC
= V
CC
Max
CE# = RP# = V
IH
RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
I
LO
Output Leakage Current
1
±
0.5
±
0.5
μ
A
I
CCS
V
CC
Standby Current
1,3,6
20
100
20
100
μ
A
0.1
2
0.2
2
mA
I
CCD
V
CC
Deep Power-Down
Current
V
CC
Read Current
1
10
10
μ
A
I
CCR
1,5,6
6
12
7
12
mA
CMOS Inputs
V
CC
= V
CC
Max, CE# = GND
f = 5 MHz, I
OUT
= 0 mA
TTL Inputs
V
CC
= V
CC
Max, CE# = GND
f = 5 MHz, I
OUT
= 0 mA
V
PP
= 3.3 V ± 0.3 V
V
PP
= 12.0 V ± 5%
V
PP
= 3.3 V ± 0.3 V
V
PP
= 12.0 V ± 5%
CE# = V
IH
7
18
8
18
mA
I
CCW
V
CC
Program/ Set
Lock-Bit Current
V
CC
Block Erase/Clear
Block Lock-Bits Current
V
CC
Program/Block
Erase Suspend Current
V
PP
Standby Current
V
PP
Read Current
V
PP
Deep Power-Down
Current
V
PP
Program/Set
Lock-Bit Current
V
PP
Block Erase/Clear
Block Lock-Bits Current
V
PP
Block Erase/Program
Suspend Current
1,7
17
12
17
12
6
mA
mA
mA
mA
mA
I
CCE
1,7
I
CCWS
I
CCES
I
PPS
I
PPR
I
PPD
1,2
1
1
1
± 2
10
0.1
± 15
200
5
± 2
10
0.1
± 15
200
5
μA
μA
μA
V
PP
V
CC
V
PP
> V
CC
RP# = GND ± 0.2 V
I
PPW
1,7
40
15
20
15
200
mA
mA
mA
mA
μA
V
PP
= 3.3 V ± 0.3 V
V
PP
= 12.0 V ± 5%
V
PP
= 3.3 V ± 0.3 V
V
PP
= 12.0 V ± 5%
V
PP
= V
PPH1/2
I
PPE
1,7
I
PPWS
I
PPES
1
10
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