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參數(shù)資料
| 型號(hào)： | PA102FM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) |
| 中文描述： | P溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管（初步） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 123K |
| 代理商： | PA102FM |
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
PA102FM
SOT-23
NIKO-SEM
1
Nov-02-2004
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
±12
V
T
C
= 25 °C
-3
Continuous Drain Current
T
C
= 70 °C
I
D
-1.4
Pulsed Drain Current
1
I
DM
-10
A
T
C
= 25 °C
1.25
Power Dissipation
T
C
= 70 °C
P
D
0.8
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
θ
JA
166
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1
%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250
μ
A
-20
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
-0.45 -0.8
-1.2
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±12V
±100 nA
V
DS
= -16V, V
GS
= 0V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16V, V
GS
= 0V, T
J
= 125 °C
-10
μ
A
On-State Drain Current
1
I
D(ON)
V
DS
= -5V, V
GS
= -4.5V
-6
A
V
GS
= -2.5V, I
D
=-1A
150
215
V
GS
= -4.5V, I
D
= -2A
98
118
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= -10V, I
D
= -2A
72
85
m
1 :GATE
2 :DRAIN
3 :SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
-20
118m
-3A
G
S
D
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