參數(shù)資料
型號: P9217
廠商: Hamamatsu Photonics
英文描述: PbS photoconductive detector
中文描述: 硫化鉛光電探測器
文件頁數(shù): 2/3頁
文件大?。?/td> 91K
代理商: P9217
2
PbS photoconductive detector
P9217
WAVELENGTH (μm)
(Typ. T=25
C)
1
4
2
3
5
0
20
40
60
80
100
R
ELEMENT TEMPERATURE (
C)
R
(Typ.)
10
1
10
2
-10
10
3
0
10
20
30
40
50
60
70
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 μW/cm
2
CHOPPING FREQUENCY: 600 Hz
SUPPLY VOLTAGE: 15 V
R
INCIDENT ENERGY (W/cm
2
)
(Typ. Ta=25
C, FULLY ILLUMINATED)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
DEPENDENT ON NEP
ELEMENT TEMPERATURE (
C)
R
(Typ.)
10
1
10
2
10
3
0
10
20
30
40
50
60
70
-10
DARK
RESISTANCE
RISE TIME
CHOPPING FREQUENCY (Hz)
R
S
(Typ. Ta=25
C)
10
1
10
2
10
3
10
1
10
2
10
3
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 μW/cm
2
SUPPLY VOLTAGE: 15 V
tr: 200 μs
S/N
S
N
SUPPLY VOLTAGE
(V)
S
N
10
20
30
40
50
60
(Typ. Ta=25
C)
0
0
0
200
400
600
800
2
4
6
8
1
3
5
7
NOISE
SIGNAL
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 μW/cm
2
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz
I
Spectral response
KIRDB0301EA
KIRDB0046EA
I
S/N vs. supply voltage
I
S/N vs. chopping frequency
KIRDB0047EB
KIRDB0302EA
I
Photo sensitivity temperature characteristic
I
Dark resistance, rise time temperature characteristics
KIRDB0303EA
KIRDB0050EA
I
Photo sensitivity linearity
If voltage of higher than 60 V is applied,
the noise increases exponentially, de-
grading the S/N. The device should be
operated at 60 V or less.
Increasing the chopping frequency re-
duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
proved by narrowing the noise bandwidth
using a lock-in amplifier.
Cooling the device enhances its sensi-
tivity, but the sensitivity also depends
on the load resistance in the circuit.
By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.
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