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參數(shù)資料
| 型號(hào)： | P8XC151SB |
| 廠商： | Intel Corp. |
| 英文描述： | HIGH-PERFORMANCE CHMOS MICROCONTROLLER |
| 中文描述： | 高性能CHMOS單片機(jī) |
| 文件頁(yè)數(shù)： | 28/33頁(yè) |
| 文件大?。?/td> | 312K |
| 代理商： | P8XC151SB |
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8XC151SA/SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
PROGRAMMING AND VERIFYING
NONVOLATILE MEMORY
The 87C151SA/SB has several areas of nonvolatile
memory that can be programmed and/or verified:
on-chip code memory (8/16 Kbytes), lock bits (3
bits), encryption array (128 bytes), and signature
bytes (3 bytes).
Figure 16 shows the setup for programming and/or
verifying the nonvolatile memory. Table 11 lists the
programming and verification operations and indi-
cates which operations apply to the different ver-
sions of the 87C151SA/SB. It also specifies the sig-
nals on the programming input (PROG
Y
) and the
ports. The ROM/OTPROM mode (port 0) specifies
the operation (program or verify) and the base ad-
dress of the memory area. The addresses (ports 1
and 3) are relative to the base address. (On-chip
memory for a 16-Kbyte ROM/OTPROM device is lo-
cated at address range 0000H–3FFFH. The other
areas of the ROM/OTPROM are outside the memo-
ry address space and are accessible only during pro-
gramming and verification.)
Information in Figures 17 and 18 define the configu-
ration bits. Figure 19 shows the waveforms for the
programming and verification cycles, and Table 12
lists the timing specifications. The signature bytes of
the
83C151SA/SB
ROM
87C151SA/SB OTPROM versions are factory pro-
grammed. Table 13 lists the addresses and the con-
tents of the signature bytes.
versions
and
the
Factory-programmed ROM and OTPROM versions
of 8XC151SA/SB use configuration byte information
supplied in a separate hexadecimal disk file.
8XC151SA/SB
devices
ROM/OTPROM arrays fetch configuration byte in-
formation from external application memory based
on an internal address range of FFF9:8H.
without
internal
NOTE:
The V
PP
source in Figure 16 must be well regu-
lated and free of glitches. The voltage on the V
PP
pin must not exceed the specified maximum,
even under transient conditions.
28
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