參數(shù)資料
型號(hào)： P87C750
廠商： NXP Semiconductors N.V.
英文描述： 80C51 8-bit microcontroller family 1K/64 OTP ROM, low pin count
中文描述： 80C51的8位單片機(jī)系列1K/64檢察官辦公室光盤(pán)，低接腳數(shù)
文件頁(yè)數(shù)： 6/16頁(yè)
文件大?。?/td> 158K
代理商： P87C750
Philips Semiconductors
Product specification
83C750/87C750
80C51 8-bit microcontroller family
1K/64 OTP/ROM, low pin count
1998 May 01
6
Table 2.
87C750 Special Function Registers
SYMBOL
DESCRIPTION
DIRECT
ADDRESS
BIT ADDRESS, SYMBOL, OR ALTERNATIVE PORT FUNCTION
MSB
LSB
RESET
VALUE
ACC*
Accumulator
E0H
E7
E6
E5
E4
E3
E2
E1
E0
00H
B*
B register
F0H
F7
F6
F5
F4
F3
F2
F1
F0
00H
DPTR:
DPH
DPL
Data pointer
(2 bytes)
High byte
Low byte
83H
82H
00H
00H
AF
AE
AD
AC
AB
AA
A9
A8
IE*#
Interrupt enable
A8H
EA
–
–
–
–
EX1
ET0
EX0
00H
82
81
80
P0*#
Port 0
80H
–
–
–
–
–
–
–
–
xxxxx111B
97
96
95
94
93
92
91
90
P1*
Port 1
90H
T0
INT1
INT0
–
–
–
–
–
FFH
P3*
Port 3
B0H
B7
B6
B5
B4
B3
B2
B1
B0
FFH
PCON#
Power control
87H
–
–
–
–
–
–
PD
IDL
xxxxxx00B
D7
D6
D5
D4
D3
D2
D1
D0
PSW*
Program status word
D0H
CY
AC
F0
RS1
RS0
OV
–
P
00H
SP
Stack pointer
81H
07H
8F
8E
8D
8C
8B
8A
89
88
TCON*#
Timer/counter control
88H
GATE
C/T
TF
TR
IE0
IT0
IE1
IT1
00H
TL#
Timer low byte
8AH
00H
TH#
Timer high byte
8CH
00H
RTL#
Timer low reload
8BH
00H
RTH#
SFRs are bit addressable.
#
SFRs are modified from or added to the 80C51 SFRs.
Timer high reload
8DH
00H
*
ABSOLUTE MAXIMUM RATINGS
1, 2
PARAMETER
RATING
UNIT
Storage temperature range
–65 to +150
°
C
Voltage from V
CC
to V
SS
–0.5 to +6.5
V
Voltage from any pin to V
SS
(except V
PP
)
–0.5 to V
CC
+ 0.5
V
Power dissipation
1.0
W
Voltage on V
PP
pin to V
SS
0 to +13.0
V
Maximum I
OL
per I/O pin
NOTES:
1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any conditions other than those described in the AC and DC Electrical Characteristics section
of this specification is not implied.
2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.
10
mA
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