參數(shù)資料
型號(hào)： P6SMBJ540A
廠商： Littelfuse, Inc.
英文描述： 3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator; Package: TSSOP 8 3.0x3.0x0.95 mm; No of Pins: 8; Container: Rail; Qty per Container: 100
中文描述： 硅雪崩二極管- 600W表面貼裝瞬態(tài)電壓Supressors
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 197K
代理商： P6SMBJ540A
Silicon Avalanche Diodes
600W Surface Mount Transient Voltage Supressors
6
www.littelfuse.com
P6SMBJ Series
Agency Approvals:
Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number:
E128662
ORDERING INFORMATION
P6SMBJ
C A
Voltage
Bi-Directional
5% Voltage Tolerance
FEATURES
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
BV for unidirectional types
Typical IR less than 1 mA above 10V
High Temperature soldering: 250
C/10 seconds at terminals
Plastic packages has Underwriters Laboratory
Flammability 94V-O
MECHANICAL CHARACTERISTICS
Case:JEDEC DO214AA. Molded plastic over glass passivated
junction
Terminal: Solder plated, solderable per MIL-STD-750
Method 2026
Polarity. Color band denotes positive end(cathode) except
Bidirectional
Standard Packaging: 12mm tape(EIA STF RS-481)
Weight: 0.003 ounce, 0.093 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types SMBJ5.0 thru types
SMBJ110(e.g. SMBJ5.OC, SMBJ170CA)
Electrical characteristics apply in both directions
MAXIMUM RATINGS @25C AMBIENT TEMPERATURE
AND CHARACTERISTICS (unless otherwise noted)
PARAMETER
Peak pulse power Dissipation on
10/1000μs waveform
(note 1,2, FIG.1)
Peak pulse current of on 10\1000μs
waveform (note 1, FIG.3)
Peak forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 2.3)
Operating junction and Storage
Temperature Range
VALUE
Min
600
SEE TABLE 1
100
-55 to +150
-55 to +150
UNIT
Watts
Amps
Amps
°C
Note 1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25
C per Fig.2
Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each
terminal
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,
Duty cycle= 4 pulses per minute
SYMBOL
PPPM
IPPM
IPSM
Tj, TsTG
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P6SMBJ540C 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 459Vso 513Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ540CA 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 459Vso 513Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ54A _R1 _10001 制造商:PanJit Touch Screens 功能描述:
P6SMBJ550 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 495Vso 522.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ550A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 495Vso 522.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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