參數資料
型號： P6SMBJ51A
元件分類： 參考電壓二極管
英文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： PLASTIC, SMB, 2 PIN
文件頁數： 1/4頁
文件大?。?/td> 78K
代理商： P6SMBJ51A
PAGE . 1
STAD-DEC.17.2004
DATA SHEET
P6SMBJ SERIES
FEATURES
For surface mounted applications in order to optimize board space.
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical I
D less than 1.0A above 10V
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
High temperature soldering : 260°C /10 seconds at terminals
Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
MECHANICALDATA
Case: JEDEC DO-214AA,Molded plastic over passivated junction.
Terminals: Solder plated,solderable per MIL-STD-202G,Method 208
Polarity: Color band denotes positive end (cathode)
Standard Packaging:12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 OC per Fig. 2.
2. Mounted on 5.0mm2 (0.13mm thick) land areas.
3. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
.185(4.70)
.220(5.59)
.096(2.44)
.083(2.1
1)
.155(3.94)
.008(.203)
.050(1.27)
.012(.305)
.160(4.06)
.200(5.08)
.083(2.13)
.075(1.91)
.130(3.30)
.002(.051)
.030(0.76)
.006(.152)
SMB/DO-214AA
Unit: inch (mm)
DEVICES FOR BIPOLARAPPLICATIONS
For Bidirectional use C or CA Suffix for types P6SMBJ5.0 thru types P6SMBJ220.
Electrical characteristics apply in both directions.
MAXIMUM RATINGSAND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
VOLTAGE
5.0 to 220 Volts
600 Watts
PEAK PULSE POWER
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相關PDF資料
PDF描述
P6SMBJ60CA 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ8.0 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ85A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ13C 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ17A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相關代理商/技術參數
參數描述
P6SMBJ51C 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 38.1Vso 42.3Vbr 8.9A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ51CA 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 40.2Vso 44.7Vbr 9.3A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ530 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 477Vso 503.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ530A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 477Vso 503.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6SMBJ530C 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 477Vso 503.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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