參數(shù)資料
型號(hào)： P6SMB51CA-E3/52
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 97K
代理商： P6SMB51CA-E3/52
P6SMB Series
Vishay General Semiconductor
Document Number: 88370
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance, junction to ambient air (1)
RθJA
100
°C/W
Thermal resistance, junction to leads
RθJL
20
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P6SMB6.8A-E3/52
0.096
52
750
7" diameter plastic tape and reel
P6SMB6.8A-E3/5B
0.096
5B
3200
13" diameter plastic tape and reel
P6SMB6.8AHE3/52 (1)
0.096
52
750
7" diameter plastic tape and reel
P6SMB6.8AHE3/5B (1)
0.096
5B
3200
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
100
10
1
0.1
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
d
0
1.0
2.0
3.0
4.0
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 s Waveform
as defined by R.E.A.
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10
1
100
200
Uni-Directional
Bi-Directional
6000
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Zero Bias
V
R, Measured at
Stand-Off Voltage V
WM
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
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