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參數(shù)資料
| 型號(hào)： | P6SMB12CAT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 600 Watt Peak Power Zener Transient Voltage Suppressors(峰值功率600W，齊納TVS) |
| 中文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, CASE 403A-03, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | P6SMB12CAT3 |
P6SMB11CAT3 Series
http://onsemi.com
4
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance
of the connection method. The capacitive effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces an
overshoot in the voltage across the equipment or component
being protected as shown in Figure 5. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. The SMB series have a very good response time,
typically < 1 ns and negligible inductance. However, external
inductive effects could produce unacceptable overshoot.
Proper circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
°
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or ambient
temperature rises above 25
°
C. The average power derating
curve normally given on data sheets may be normalized and
used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| P6SMB12CAT3G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12V 600W Bidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB13 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB130 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB130A | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB130A R4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 130V 5% UNIDIR TRANSZORB-TVS RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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