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參數(shù)資料
| 型號(hào)： | P6SMB12A-HE3/5B |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | P6SMB12A-HE3/5B |
Document Number 88370
08-Sep-06
www.vishay.com
3
P6SMB Series
Vishay General Semiconductor
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air (1)
RθJA
100
°C/W
Thermal resistance junction to leads
RθJL
20
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P6SMB6.8A-E3/52
0.096
52
750
7" Diameter Plastic Tape & Reel
P6SMB6.8A-E3/5B
0.096
5B
3200
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction
Temperature
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
100
10
1
0.1
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0
4.0
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
10
100
1000
10
1
100
200
Uni-Directional
Bi-Directional
6000
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-off Voltage VWM
C
J,
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
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參數(shù)描述 |
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| P6SMB12A-M3/52 | 制造商:Vishay Semiconductors 功能描述:600W,12V 5%,UNIDIR,SMB TVS |
| P6SMB12A-M3/5B | 制造商:Vishay Semiconductors 功能描述:600W,12V 5%,UNIDIR,SMB TVS |
| P6SMB12AT3 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12V 600W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB12AT3G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB12C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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