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參數(shù)資料
| 型號： | P6KE200BG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 Watt Peak Power Transient Voltage Suppressors |
| 中文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59AA-01, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 125K |
| 代理商： | P6KE200BG |
P6KE200B
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
≤
25
°
C
P
PK
600
W
Steady State Power Dissipation
@ T
L
≤
75
°
C, Lead Length = 3/8
″
, Derated above T
L
= 75
°
C
P
D
5.0
50
W
mW/
°
C
Thermal Resistance Junction--to--Lead
R
θ
JL
15
°
C/W
Forward Surge Current (Note 2) @ T
A
= 25
°
C
I
FSM
100
A
Operating and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
RecommendedOperatingConditionsisnotimplied.ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffect
device reliability.
1. Nonrepetitive current pulse per Figure 3 and derated above T
A
= 25
°
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
T
J
, T
stg
-- 55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 50 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
Θ
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Uni--Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 50 A)
Device
P6KE200B
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the DC or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
°
C.
6. Surge current waveform per Figure 3 and derate per Figures 1 and 2.
Device
Marking
P6KE200B
V
RWM
(Note 4)
I
R
@ V
RWM
m
A
Breakdown Voltage
V
C
@ I
PP
(Note 6)
Θ
V
BR
%/
°
C
0.108
V
BR
(Note 5)
(Volts)
@ I
T
V
C
I
PP
V
Min
Nom
Max
mA
V
A
171
5
190
200
210
1
274
2.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P6KE200BRL | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| P6KE200BRLG | 制造商:ON Semiconductor 功能描述: |
| P6KE200C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 162Vso 127VAC 2.1A RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6KE-200C | 制造商:Semiconductors 功能描述: |
| P6KE200C/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 200V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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