參數(shù)資料
型號(hào)： P6KE13C/54-E3
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 參考電壓二極管
英文描述： 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
封裝： PLASTIC, DO-15, 2 PIN
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 40K
代理商： P6KE13C/54-E3
P6KE Series
Vishay Semiconductor
Ratings and
Characteristic Curves (TA=25OC unless otherwise noted.)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)
or
Current
(I
PPM
)
Derating
in
Percentage,
%
TA — Ambient Temperature (
°C)
1
5
10
50
100
Fig. 2 – Pulse Derating Curve
Fig. 6 - Max. Non-Repetitive Forward Surge Current
I FSM
—
Peak
Forward
Surge
Current
(A)
Number of Cycles at 60 Hz
C
J—
Junction
Capacitance
(pF)
10
100
1,000
6,000
10
1.0
100
200
V(BR) — Breakdown Voltage (V)
10
50
100
200
Fig. 1 – Peak Pulse Power Rating Curve
P
M(A
V)
,Steady
State
Power
Dissipation
(W)
P
PPM
—
Peak
Pulse
Power
(kW)
0.1
1
10
100
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
0.1
s
1.0
s10s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
Fig. 5 – Steady State Power Derating Curve
0
1.25
2.5
3.75
5.0
0
75
25
100
125
150
175
200
Fig. 7 – Typ. Reverse Leakage Characteristics
TL — Lead Temperature (
°C)
50
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
I D
—
Instantaneous
Reverse
Leakage
Current
(
A)
0.01
0.1
10
100
1
0
100
200
V(BR) — Breakdown Voltage (V)
300
400
600
500
L = 0.375" (9.5mm)
Lead Lengths
60 HZ Resistive or
Inductive Load
T
ransient
Thermal
Impedance
(°
C/W)
10
100
1
0.1
0.001
tp — Pulse Duration (sec)
0.01
0.1
1
10
100
1000
Fig. 8 – Typ. Transient Thermal Impedance
Fig. 4 – Typ. Junction Capacitance Uni-Directional
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Zero Bias
Measured at
Stand-Off
Voltage, VWM
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
td
Fig. 3 -- Pulse Waveform
TJ = 25
°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of IPPM
0
1.0
2.0
3.0
4.0
t -- Time (ms)
0
50
100
150
I PPM
--
Peak
Pulse
Current,
%
I
RSM
tr = 10
sec.
Half Value — IPPM
2
10/1000
sec. Waveform
as defined by R.E.A.
Peak Value
IPPM
Uni-Directional Only
Measured at Devices
Stand-off Voltage, VWM
TA = 25
°C
P6KE Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88369
4
09-Oct-02
相關(guān)PDF資料
PDF描述
P6KE13A-E3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE400A-E3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE56C-E3 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE68A-E3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
P6KE82C-E3 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P6KE13CA 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600 Watt TVS RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6KE13CA _AY _10001 制造商:PanJit Touch Screens 功能描述:
P6KE13CA 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE TVS 600W 13V
P6KE13CA/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 13V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P6KE13CA/23 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 13V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*