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參數(shù)資料
| 型號： | P5506NVG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N- & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 蘼 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 530K |
| 代理商： | P5506NVG |
2
AUG-17-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P5506NVG
SOP-8
Lead-Free
NIKO-SEM
V
DS
= 48V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V
N-Ch
P-Ch
1
-1
V
DS
= 40V, V
GS
= 0V, T
J
= 55 °C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -36V, V
GS
= 0V, T
J
= 55 °C
N-Ch
P-Ch
10
-10
μ
A
V
DS
= 5V, V
GS
= 10V
On-State Drain Current
1
I
D(ON)
V
DS
=-5V, V
GS
= -10V
N-Ch
P-Ch
20
-20
A
V
GS
= 4.5V, I
D
= 4A
V
GS
= -4.5V, I
D
= -3A
N-Ch
P-Ch
55
90
75
150
V
GS
= 10V, I
D
= 4.5A
Drain-Source
Resistance
1
On-State
R
DS(ON)
V
GS
= -10V, I
D
= -3.5A
N-Ch
P-Ch
42
60
55
80
m
V
DS
= 10V, I
D
= 4.5A
Forward Transconductance
1
g
fs
V
DS
= -5V, I
D
= -3.5A
N-Ch
P-Ch
14
9
S
DYNAMIC
Input Capacitance
C
iss
N-Ch
P-Ch
650
760
Output Capacitance
C
oss
N-Ch
P-Ch
80
90
Reverse Transfer Capacitance
C
rss
N-Channel
V
GS
= 0V, V
DS
= 25V, f = 1MHz
P-Channel
V
GS
= 0V, V
DS
= -30V, f = 1MHz N-Ch
P-Ch
35
40
pF
Total Gate Charge
2
Q
g
N-Ch
P-Ch
12.5
15
18
21
Gate-Source Charge
2
Q
gs
N-Ch
P-Ch
2.4
2.5
Gate-Drain Charge
2
Q
gd
N-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 4.5A
P-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -3.5A
N-Ch
P-Ch
2.6
3.0
nC
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