參數(shù)資料
型號(hào)： P5506BVG
廠商： Electronic Theatre Controls, Inc.
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 1/5頁
文件大小： 301K
代理商： P5506BVG
1
SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P5506BVG
SOP-8
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
5.5
Continuous Drain Current
T
C
= 70 °C
I
D
4.5
Pulsed Drain Current
1
I
DM
20
A
T
C
= 25 °C
2.5
Power Dissipation
T
C
= 70 °C
P
D
1.3
W
Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
θ
JA
50
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
60
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.0
1.5
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±100
nA
V
DS
= 48V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40V, V
GS
= 0V, T
J
= 55 °C
10
μ
A
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
20
A
V
GS
= 4.5V, I
D
= 4.5A
55
75
Drain-Source
Resistance
1
On-State
R
DS(ON)
V
GS
= 10V, I
D
= 5.5A
42
55
m
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 5.5A
14
S
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
60
55m
5.5A
G
D
S
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
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