參數(shù)資料
型號(hào)： P4SMA12CA-E3/5A
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 300 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封裝： ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 95K
代理商： P4SMA12CA-E3/5A
P4SMA Series
Vishay General Semiconductor
Document Number: 88367
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance, junction to ambient air (1)
RθJA
120
°C/W
Thermal resistance, junction to leads
RθJL
30
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P4SMA6.8A-E3/61
0.064
61
1800
7" diameter plastic tape and reel
P4SMA6.8A-E3/5A
0.064
5A
7500
13" diameter plastic tape and reel
P4SMA6.8AHE3/61 (1)
0.064
61
1800
7" diameter plastic tape and reel
P4SMA6.8AHE3/5A (1)
0.064
5A
7500
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
P4SMA6.8A -
P4SMA91A
P4SMA100A -
P4SMA220A
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 °C
P
PPM
-
P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0
25
50
75
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
P
eak
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
d
0
1.0
2.0
3.0
4.0
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 s Waveform
as defined by R.E.A.
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
10
1
100
200
Uni-Directional
Bi-Directional
C
J-
J
u
nction
Capacitance
(pF)
VBR - Breakdown Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Stand-Off
Voltage V
WM
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P4SMA12CAHE3/5A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 12V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P4SMA12CAHE3/61 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 12V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P4SMA12CAHE3/63 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 12V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P4SMA12CA-M3/5A 制造商:Vishay Semiconductors 功能描述:400W,12V 5%,BIDIR,SMA TVS
P4SMA12CA-M3/61 制造商:Vishay Semiconductors 功能描述:400W,12V 5%,BIDIR,SMA TVS
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