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參數(shù)資料
| 型號： | P4SMA11A-51 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 80K |
| 代理商： | P4SMA11A-51 |
P4SMA Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88367
www.vishay.com
17-Feb-04
3
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)or
Current
(I
PPM
)
Derating
in
Percentage,
%
TA — Ambient Temperature (
°C)
1
5
10
50
100
tp — Pulse Duration (sec)
Fig. 2 – Pulse Derating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s1.0s10s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
T
ransient
Thermal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25
°C
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I FSM
—
Peak
Forward
Surge
Current
(A)
Number of Cycles at 60 Hz
C
J—
Junction
Capacitance
(pF)
10
100
1,000
10,000
10
1
100
200
V(BR) — Breakdown Voltage (V)
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Stand-Off
Voltage, VWM
Uni-Directional
Bi-Directional
10
50
100
200
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Fig. 4 – Typical Junction Capacitance
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
P4SMA6.8A --
P4SMA91A
P4SMA100A --
P4SMA220A
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| P4SMA11AE3/TR13 | 制造商:Microsemi Corporation 功能描述:P4SMA11AE3/TR13 - Tape and Reel |
| P4SMA11C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 9.4Vso 10.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P4SMA11CA | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 9.4Vso 10.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P4SMA11CA R2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 11V 5% BIDIR TRANSZORB-TVS RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P4SMA11CA R3 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 11V 5% BIDIR TRANSZORB-TVS RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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