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參數(shù)資料
| 型號(hào)： | P4KE530A-B |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | P4KE530A-B |
67
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Revision: January 09, 2009
Axial Leaded – 400W > P4KE series
P4KE Series
Please refer to http://www.Littelfuse.com/series/P4KE.html for current information.
P4KE
S
eries
Ratings and Characteristic Curves (T
A=25°C unless otherwise noted)
t
d
- Pulse Width (sec.)
P
PPM
-Peak
Pulse
Power
(KW)
0.1μs
1.0μs
10μs
100μs
1.0ms
10ms
0.1
1
10
100
T
A
- Ambient Temperature (C)
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
0
25
50
75
100
125
150
175
200
Figure 1 - Peak Pulse Power Rating
Figure 2 - Pulse Derating Curve
I PPM
-P
eak
P
ulse
Cur
rent,
%
I
RSM
0
50
100
150
1.0
2.0
3.0
4.0
tr=10μsec
Peak Value
IPPM
2
TJ=25°C
Pulse Width(td) is dened
as the point where the peak
current decays to 50% of IPPM
10/1000μsec. Waveform
as dened by R.E.A
td
t-Time (ms)
Half Value
IPPM
( )
1
10
100
1000
10000
1.0
10.0
100.0
1000.0
V
BR - Reverse Breakdown Voltage (V)
C
j(
pF)
Tj=25C
f=1.0MHz
Vsig=50mVp-p
Uni-directional VR=0V
Bi-directional VR=0V
Uni-directional @ V
R
Bi-directional @V
R
Figure 3 - Pulse Waveform
Figure 4 - Typical Junction Capacitance Uni-Directional
Figure 5 - Steady Pulse Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
175
200
S
te
a
d
y
S
a
te
P
o
wer
D
is
s
ip
a
ti
o
n
(
W
)
L = 0.375" (9.5mm)
Lead Lengths
T
L-Lead Temperature(C)
0
5
10
15
20
25
30
35
40
45
110
100
Number of Cycles at 60 Hz
I FSM
-P
eak
F
o
rw
ard
Surge
C
u
rrent
(A)
Figure 6 - Maximum Non-Repetitive Peak Forward
Surge Current Uni-Directional Only
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|---|---|
| P4KE530AE3/TR13 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel |
| P4KE530-B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TVS DIODE AXIAL LEAD RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P4KE530C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 450Vso 503.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P4KE530CA | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 450Vso 503.5Vbr RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P4KE530CA-B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TVS DIODE AXIAL LEAD RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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