參數(shù)資料
型號： P4KE250C-E3/23
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
封裝： ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 90K
代理商： P4KE250C-E3/23
Vishay General Semiconductor
P4KE6.8 thru P4KE540A
Document Number 88365
07-Jun-06
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in Unidirectional and Bidirectional
400 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
DO-204AL (DO-41)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirection use C or CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V(BR) Unidirectional
6.8 V to 540 V
V(BR) Bidirectional
6.8 V to 440 V
PPPM
400 W
PD
1.0 W
IFSM (Unidirectional only)
40 A
Tj max.
175 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) VF = 3.5 V for P4KE220(A) & below; VF = 5.0 V for P4KE250(A) & above
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak power dissipation with a 10/1000 s waveform (1) (Fig. 1)
PPPM
400
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
PD
1.0
W
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only (2)
IFSM
40
A
Maximum instantaneous forward voltage at 25 A for unidirectional only (3)
VF
3.5/5.0
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關(guān)PDF資料
PDF描述
P4KE6.8CA-E3/23 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
P4KE62CA-E3/4 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
P4KE20A-HE3/54 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
P4KE39C-HE3/54 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
P4KE22CA 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P4KE250C-G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W, 250V,Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P4KE250C-T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 bi-dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P4KE250C-TP 制造商:Micro Commercial Components (MCC) 功能描述:Diode TVS Single Bi-Dir 214V 400W 2-Pin DO-41 T/R
P4KE250-E3/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 250V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
P4KE250-E3/23 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 250V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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