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參數(shù)資料
| 型號： | P4KE20A-HE3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 90K |
| 代理商： | P4KE20A-HE3/54 |
www.vishay.com
4
Document Number 88365
07-Jun-06
Vishay General Semiconductor
P4KE6.8 thru P4KE540A
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Typical thermal resistance junction-to-lead
RθJL
60
°C/W
Typical thermal resistance junction-to-ambient, LLead = 10 mm
RθJA
100
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P4KE6.8A-E3/54
0.350
54
4000
13" Diameter Paper Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
100
10
1
0.1
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td, Pulse Width
100
75
50
25
0
25
50
75
100
125
150
175
200
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
ercentage
,
%
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance Uni-Directional
0
1.0
2.0
3.0
4.0
0
50
100
150
td
t - Time (ms)
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
tr = 10 sec.
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec. Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
10000
1.0
10
100
200
Measured at
Zero Bias
Measured at Stand-off
Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
C
J,
J
u
nction
Capacitance
(pF)
V(BR) - Breakdown Voltage (V)
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參數(shù)描述 |
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| P4KE20AJ | 制造商:MIC 制造商全稱:MIC GROUP RECTIFIERS 功能描述:PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPERSSOR |
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| P4KE20APT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
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