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參數(shù)資料
| 型號(hào)： | P4C198L-20CM |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 16K X 4 STANDARD SRAM, 20 ns, CDIP24 |
| 封裝： | 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-24 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 231K |
| 代理商： | P4C198L-20CM |
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P4C198/198L, P4C198A/198AL
Page 2 of 13
Document # SRAM113 REV A
CE
1, CE2 ≥ VIH
Mil.
V
CC = Max.,
Ind./Com’l.
f = 0, Outputs Open
V
IN ≤ VLC or VIN ≥ VHC
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
–0.5 to +7
V
Respect to GND
Terminal Voltage with
–0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
(up to 7.0V)
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
–55 to +125
°C
Bias
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM ratingconditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
1, CE2 ≥ VIH
Mil.
V
CC = Max .,
Ind./Com’l.
f = Max., Outputs Open
___
40
35
___
20
15
40
n/a
1.5
n/a
mA
___
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Commercial
Grade(2)
Ambient
Temperature
GND
V
CC
0°C to +70°C
–40°C to +85°C
0V
5.0V ± 10%
0V
5.0V ± 10%
–55°C to +125°C
Military
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN = 0V
V
OUT = 0V
5
7
Unit
pF
CAPACITANCES(4)
V
CC = 5.0V, TA = 25°C, f = 1.0MHz
n/a = Not Applicable
Symbol
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC = Min., IIN = –18 mA
I
OL = +10 mA, VCC = Min.
I
OL = +8 mA, VCC = Min.
I
OH = –4 mA, VCC = Min.
V
CC = Max.
Mil.
V
IN = GND to VCC
Ind./Com’l.
V
CC = Max., CE = VIH,
Mil.
V
OUT = GND to VCC
Ind./Com’l.
P4C198 / 198A
Min
2.2
–0.5(3)
V
CC –0.2
–0.5(3)
2.4
–10
–5
–10
–5
Max
V
CC +0.5
0.8
V
CC +0.5
0.2
–1.2
0.4
+10
+5
+10
+5
P4C198L / 198AL
Min
Max
2.2
–0.5(3)
V
CC –0.2
–0.5(3)
2.4
–5
n/a
–5
n/a
V
CC +0.5
0.8
V
CC +0.5
0.2
0.4
–1.2
+5
n/a
+5
n/a
Unit
V
A
Typ.
Industrial
0.5
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