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參數(shù)資料
| 型號： | P4C174-10CM |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | HIGH SPEED 8K x 8 CACHE TAG STATIC RAM |
| 中文描述： | 高速8K的高速緩存標(biāo)記× 8靜態(tài)RAM |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 290K |
| 代理商： | P4C174-10CM |
P4C174
Page 6 of 12
Document #
SRAM118
REV C
Parameter
Symbol
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
t
WC
t
CW
t
AS
t
AW
Write Cycle Time
Chip Enable LOW to End of
Write
Address Valid to Beginning
of Write
Address Valid to End of
Write
End of Write to Address
Change
t
DW
t
DH
t
OW
t
WP
t
AH
Data Valid to End of Write
Unit
ns
ns
ns
ns
ns
ns
–25
–20
–15
–12
–10
–8
Write Pulse Width
End of Write to Data Change
Write Enable HIGH to Output
LOW-Z
(1)
Write Enable LOW to Output
HIGH-Z
(1)
t
WZ
8
7
0
7
0
7
6
0
0
4
10
9
0
9
0
9
6
0
0
4
12
10
0
10
0
10
6
0
0
AC CHARACTERISTICS - WRITE CYCLE
(V
CC
= 5V ± 10%, 0°C to +70°C)
4
15
12
0
12
0
12
7
0
0
5
20
15
0
15
0
15
10
0
0
7
20
15
0
15
0
15
10
0
0
7
ns
ns
ns
ns
WRITE CYCLE NO. 1 (
WE
CONTROLLED)
(6)
WRITE CYCLE NO. 2 (
CE
CONTROLLED)
(6)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。