參數(shù)資料
型號: P2600ECRP2
英文描述: MCU CMOS 44 LD 40MHZ 8K OTP, -40C to +85C, 44-PLCC, T/R
中文描述: SIDAC的| 300V五(公報)最大| 800mA的我(縣)|對92VAR
文件頁數(shù): 71/161頁
文件大小: 986K
代理商: P2600ECRP2
SIDACtor
Data Book
Triac Protection
Teccor Electronics
(972) 580-7777
3 - 31
R
Thyristors
Damage can occur to a thyristor if the thyristor
s repetitive peak off-state voltage is
exceeded. A thyristor
s repetitive peak off-state voltage may be exceeded due to dirty
AC power mains, inductive spikes, motor latch up, etc.
Thyristor Reference Circuit
Figures 3-33 & 3-34 show two different methods of protecting a triac. In Figure 3-33, a
SIDACtor is connected from MT2 to the gate of the triac. When the voltage applied to
the triac exceeds the SIDACtor
s V
DRM
, the SIDACtor turns on, producing a gate
current which turns the triac on.
The circuit in Figure 3-34 places a SIDACtor across MT2 and MT1 of the triac. In this
instance the SIDACtor protects the triac by turning on and shunting the transient
before it exceeds the V
DRM
rating of the triac.
Regardless of the method chosen, when using a SIDACtor to protect a thyristor, the
following design considerations must be followed:
Figure 3-33 TRIAC Protection
Figure 3-34 TRIAC Protection
V
DRM
of the SIDACtor < V
DRM
of Triac
SIDACtor V
DRM
> 120% V
PK(power supply)
SIDACtor must be placed behind the load
MT2
Triac
To
Gating
Circuitry
Hot
Neutral
MT1
SIDACtor
Load
MT2
Triac
To
Gating
Circuitry
Hot
Neutral
MT1
SIDACtor
Load
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