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參數(shù)資料
| 型號(hào)： | P06B03LVG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙P溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 156K |
| 代理商： | P06B03LVG |
Dual P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P06B03LVG
SOP-8
Lead Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
1
May-04-2005
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
-6
Continuous Drain Current
T
C
= 70 °C
I
D
-5
Pulsed Drain Current
1
I
DM
-30
A
T
C
= 25 °C
2.5
Power Dissipation
T
C
= 70 °C
P
D
1.3
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
L
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
θ
JA
62.5
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1
%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250
μ
A
-30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
-0.9
-1.5
-3
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±100 nA
V
DS
= -24V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20V, V
GS
= 0V, T
J
= 125 °C
10
μ
A
On-State Drain Current
1
I
D(ON)
V
DS
= -5V, V
GS
= -10V
-30
A
V
GS
= -4.5V, I
D
=- 5A
65
80
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= -10V, I
D
= -6A
40
50
m
G :GATE
D :DRAIN
S :SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
-30
50m
-6A
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