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參數(shù)資料
| 型號： | P0102DA2AL3 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 0.8A SCRs |
| 中文描述： | 0.8A可控硅 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 83K |
| 代理商： | P0102DA2AL3 |
P0102BL
4/5
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
Fig. 8:
Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I2t.
Fig. 10:
On-state characteristics (maximum
values).
Fig. 11:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
μ
m).
0
1
2
3
4
5
6
7
0
2
4
6
8
10
VTj = 125°C
Rgk = 1k
dV/dt[Cgk] / dV/dt [Rgk = 1k
]
Cgk(nF)
ITSM(A)
Number of cycles
1
0
1
2
3
4
5
6
7
10
100
1000
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
ITSM(A),I
2
t(A
2
s)
Tj initial = 25°C
ITSM
I
2
t
tp(ms)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
1E-2
1E-1
1E+0
1E+1
ITM(A)
Tj max.:
Vto = 1.00 V
Rd = 1
Tj = Tj max.
Tj = 25°C
VTM(V)
0
10
20
30
40
50
60
70
80
90
100
0
100
200
300
400
500
Rth(j-a) (°C/W)
S (mm
2
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P0102DB | SENSITIVE GATE SCR |
| P0102DN | 0.8A SCRs |
| P0102MA | 0.8A SCRs |
| P0102MA1AA3 | 0.8A SCRs |
| P0102MA2AL3 | 0.8A SCRs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P0102DA-2AL3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Sensitive standard SCRs up to 0.8 A |
| P0102DA5AA4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:0.8A SCRs |
| P0102DA5AL3 | 制造商:STMicroelectronics 功能描述:THYRISTOR 0.8A 400V TO-92 制造商:STMicroelectronics 功能描述:Thyristor SCR 0.8A 400V TO92 |
| P0102DA-5AL3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Sensitive standard SCRs up to 0.8 A |
| P0102DB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SENSITIVE GATE SCR |
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