參數(shù)資料
型號: OPB825B
廠商: TT Electronics/Optek Technology
文件頁數(shù): 2/3頁
文件大?。?/td> 181K
描述: SENS OPTO SLOT 4.06MM TRANS THRU
標準包裝: 1
檢測距離: 0.160"(4.06mm)
檢測方法: 可傳導的
輸出配置: 光電晶體管
電流 - DC 正向(If): 50mA
電流 - 集電極 (Ic)(最大): 30mA
電壓 - 集電極發(fā)射極擊穿(最大): 30V
安裝類型: 通孔
封裝/外殼: PCB 安裝
包裝: 散裝
類型: 無放大
工作溫度: -40°C ~ 85°C
OPTEK Technology Inc.  1645 Wallace Drive, Carrollton, Texas 75006 
Phone: (972) 323-2200 or (800) 341-4747    FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A .1 12/05
Page 2 of 3
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB825, OPB825A, OPB825B
Electrical Characteristics (T
A
 = 25癈 unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (See OP240 for additional information)
V
F
    Forward Voltage
-    -    1.6    V   I
F
 = 20 mA
I
R
    Reverse Current
-    -    100    礎   V
R
 = 2 V
Output Phototransistor (See OP550 for additional information)
V
(BR)CEO
  Collector-Emitter Breakdown Voltage    30    -     -     V   I
C
 = 1 mA
 
V
(BR)ECO
  Emitter-Collector Breakdown Voltage    5    -     -     V   I
E
 = 100 礎
 
I
CEO
   Collector Dark Current
-    -    100    nA   V
CE
 = 10 V, I
F
 = 0, E
E
 = 0
Combined
V
CE(SAT)
  Collector-Emitter Saturation
-    -    0.4    V   I
C
 = 250 礎, I
F
 = 20 mA
 
I
C(ON)
   On-State Collector Current
1.0    -    45.0   mA   I
F
 = 20 mA, V
CE
 = 10 V
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.67 mW/癈 above 25 ?C.
(3) All parameters tested using pulse techniques.
(4) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones.
Absolute Maximum Ratings (T
A
=25癈 unless otherwise noted)
Storage & Operating Temperature Range
-40癈 to +85?C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
(1)
 
260?C
Input Diode
Forward DC Current
50 mA
Peak Forward Current (1 祍 pulse width, 300 pps)
3 A
Reverse DC Voltage
2 V
Power Dissipation
(2)
 
100 mW
Collector-Emitter Voltage
 
30 V
Emitter-Collector Voltage
5 V
Output Phototransistor
Collector DC Current
 
30 mA
Power Dissipation
(2)
 
100 mW
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