參數(shù)資料
型號: OPB821S5Z
廠商: TT Electronics/Optek Technology
文件頁數(shù): 3/7頁
文件大?。?/td> 219K
描述: SENS OPTO SLOT 2.03MM TRANS C-MT
標準包裝: 1
檢測距離: 0.080"(2.03mm)
檢測方法: 可傳導的
輸出配置: 光電晶體管
電流 - DC 正向(If): 50mA
電壓 - 集電極發(fā)射極擊穿(最大): 30V
安裝類型: 底座安裝
封裝/外殼: 模塊,預接線
包裝: 散裝
類型: 無放大
工作溫度: -40°C ~ 85°C
OPTEK Technology Inc.  1645 Wallace Drive, Carrollton, Texas 75006 
Phone: (972) 323-2200 or (800) 341-4747    FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue C 09/2011
Page 3 of 7
Slotted Optical Switch
OPB820, OPB821Z, OPB821S
Z
 
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Electrical Characteristics (T
A
 = 25癈 unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (See OP245 for additional information)
V
F
    Forward Voltage
-    -    1.7    V     I
F
 = 20 mA
I
R
     Reverse Current
-    -    100    礎    V
R
 = 2 V
Output Phototransistor (See OP555 for additional information) 
V
(BR)CEO
   Collector-Emitter Breakdown Voltage   30    -     -     V   I
C
 = 100 mA
V
(BR)ECO
   Emitter-Collector Breakdown Voltage   5    -     -     V   I
E
 = 100 礎
I
CEO
    Collector-Emitter Dark Current
-    -    100    nA   V
CE
 = 10 V, I
F
 = 0, I
E
 = 0
Coupled  
V
CE(SAT)
 
Collector-Emitter Saturation Voltage
   OPB820, OPB821Z
   OPB820S3, OPB821S3Z
   OPB820S5, OPB821S5Z
   OPB820S10, OPB821S10Z
 
-
-
-
-
 
-
-
-
-
 
0.4
0.4
0.4
0.4
 
V
V
V
V
 
I
C
 = 250 礎, I
F
 = 20 mA
I
C
 = 40 礎, I
F
 = 20 mA
I
C
 = 150 礎, I
F
 = 20 mA
I
C
 = 250 礎, I
F
 = 20 mA
I
C(ON)
 
On-State Collector Current
   OPB820, OPB821Z
   OPB820S3, OPB821S3Z
   OPB820S5, OPB821S5Z
   OPB820S10, OPB821S10Z
 
500
60
300
400
 
-
-
-
-
 
-
-
-
-
 
 
V
CE
 = 5 V, I
F
 = 20 mA
V
CE
 = 5 V, I
F
 = 20 mA
V
CE
 = 5 V, I
F
 = 20 mA
V
CE
 = 5 V, I
F
 = 20 mA
Absolute Maximum Ratings (T
A
=25癈 unless otherwise noted)
Storage and Operating Temperature
-40癈 to +85癈
Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 seconds with soldering iron)
(1)
 
260癈
Input Diode
 
Continuous Forward Current
 
50 mA
Peak Forward Current (1祍 pulse width, 300 pps)
1 A
Reverse Voltage
 
2 V
Power Dissipation
(2)
 
100 mW
Output Phototransistor 
Collector-Emitter Voltage
 
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
(2)
 
100 mW
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB820, derate linearly 1.67 mW/?C above 25?C. For OPB821Z, derate linearly 1.82 mW/?C above 25?C.
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and
ketones.
(4) All parameters were tested using pulse technique.
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