參數(shù)資料
型號(hào): OPB806
廠商: TT Electronics/Optek Technology
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 211K
描述: SENS OPTO SLOT 3.18MM TRANS THRU
標(biāo)準(zhǔn)包裝: 1
檢測(cè)距離: 0.125" (3.18mm)
檢測(cè)方法: 可傳導(dǎo)的
輸出配置: 光電晶體管
電流 - DC 正向(If): 50mA
電壓 - 集電極發(fā)射極擊穿(最大): 30V
安裝類型: 通孔
封裝/外殼: PCB 安裝
包裝: 散裝
類型: 無(wú)放大
工作溫度: -40°C ~ 85°C
OPTEK Technology Inc.  1645 Wallace Drive, Carrollton, Texas 75006 
Phone: (972) 323-2200 or (800) 341-4747    FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 03/2012
Page 2 of 4
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB806
 
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.67 mW/癈 above 25 ?C..
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and
ketones.
(4) All parameters were tested using pulse technique.
Electrical Characteristics (T
A
 = 25癈 unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (See OP165 for additional information)
V
F
    Forward Voltage
-    -    1.7    V   I
F
 = 20 mA
I
R
    Reverse Current
-    -    100    礎(chǔ)   V
R
 = 2 V
Output Phototransistor (See OP505 for additional information)
V
(BR)CEO
  Collector-Emitter Breakdown Voltage    30    -     -     V   I
C
 = 100 礎(chǔ)
V
(BR)ECO
  Emitter-Collector Breakdown Voltage    5    -     -     V   I
E
 = 100 礎(chǔ)
I
CEO
   Collector-Emitter Dark Current
-    -    100    nA   V
CE
 = 10 V, I
F
 = 0, E
E
 = 0
Combined
V
CE(SAT)
  Collector-Emitter Saturation Voltage     -    -    0.5    V   I
C
 = 200 礎(chǔ), I
F
 = 20 mA
I
C(ON)
   On-State Collector Current
0.4    -     -    mA   V
CE
 = 0.5 V, I
F
 = 20 mA
Absolute Maximum Ratings (T
A
=25癈 unless otherwise noted)
Storage & Operating Temperature Range
-40?C to +85?C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
(1)
 
260?C
Input Diode
Continuous Forward Current
50 mA
Peak Forward Current (1 約 pulse width, 300 pps)
3 A
Reverse Voltage
2 V
Power Dissipation
(2)
 
100 mW
Output Phototransistor
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
(2)
 
100 mW
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