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參數(shù)資料
| 型號： | OPA658UB |
| 元件分類： | 運算放大器 |
| 英文描述： | Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER |
| 中文描述： | 寬帶，低功耗電流反饋運算放大器 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 215K |
| 代理商： | OPA658UB |
3
OPA658
1
2
3
4
8
7
6
5
NC
+V
S
Output
NC
NC
–Input
+Input
–V
S
1
2
3
5
4
+V
S
–Input
Output
–V
S
+Input
Top View
DIP/SO-8
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
PIN CONFIGURATION
Supply ...............................................................................................
±
5.5V
Internal Power Dissipation .......................... See Thermal Considerations
Differential Input Voltage ..................................................................
±
1.2V
Input Voltage Range............................................................................
±
V
S
Storage Temperature Range: P, U, UB, N, NB............ –40
°
C to +125
°
C
Lead Temperature (soldering, 10s).............................................. +300
°
C
(soldering, SOIC 3s) ...................................................................... +260
°
C
Junction Temperature (T
J
)............................................................ +175
°
C
ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-Brown
Corporation recommends that all integrated circuits be handled
and stored using appropriate ESD protection methods.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet published speci-
fications.
SOT23-5
PACKAGE
DRAWING
NUMBER
(1)
TEMPERATURE
RANGE
PACKAGE
MARKING
(2)
ORDERING
NUMBER
(3)
PRODUCT
PACKAGE
OPA658U
OPA658UB
OPA658N
SO-8 Surface Mount
SO-8 Surface Mount
5-pin SOT23-5
182
182
331
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
OPA658U
OPA658UB
A58
OPA658U
OPA658UB
OPA658N-250
OPA658N-3k
OPA658NB-250
OPA658NB-3k
OPA658P
OPA658NB
5-pin SOT23-5
331
–40
°
C to +85
°
C
A58B
OPA658P
8-Pin Plastic DIP
006
–40
°
C to +85
°
C
OPA658P
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) The “B” grade of the SO-8 will be
marked with a “B” by pin 8. The “B” grade of the SOT23-5 will be marked with a “B” near pins 3 and 4. (3) The SOT23-5 is only available on a 7" tape and reel (e.g. ordering
250 pieces of “OPA658N-250” will get a single 250 piece tape and reel. Ordering 3000 pieces of “OPA658N-3k” will get a single 3000 piece tape and reel). Please refer
to Appendix B of Burr-Brown IC Data Book for detailed Tape and Reel Mechanical information.
PACKAGE/ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OPA658 | Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER |
| OPA658N | Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER |
| OPA658P | Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER |
| OPA658U | Wideband, Low Power Current Feedback OPERATIONAL AMPLIFIER |
| OPA660AP | Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OPA659 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Wideband, Unity-Gain Stable, JFET-Input OPERATIONAL AMPLIFIER |
| OPA659EVM | 功能描述:放大器 IC 開發(fā)工具 OPA659EVM Eval Mod RoHS:否 制造商:International Rectifier 產(chǎn)品:Demonstration Boards 類型:Power Amplifiers 工具用于評估:IR4302 工作電源電壓:13 V to 23 V |
| OPA659IDBVR | 功能描述:高速運算放大器 650MHz unity gain stable JFET Inp amp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| OPA659IDBVT | 功能描述:高速運算放大器 650MHz unity gain stable JFET Inp amp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| OPA659IDRBR | 功能描述:高速運算放大器 650MHz unity gain stable JFET inp Amp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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