參數(shù)資料
型號: OPA548
英文描述: High-Voltage, High-Current Operational Amplifier
中文描述: 高電壓,大電流運算放大器
文件頁數(shù): 3/9頁
文件大小: 82K
代理商: OPA548
3
OPA541
Top View
TO–3
Plastic Package
CONNECTION DIAGRAMS
–In
NC
+In
NC
V
O
Output
Drive
R
CL
–V
S
+V
S
Current
Sense
1
3
5
7
9
11
2
4
6
8
10
Tab at –V
S
Current
Sense
–V
S
+In
–In
+V
S
NC
NC
Output
Drive
R
CL
V
O
1
2
3
8
5
6
4
7
ORDERING INFORMATION
TEMPERATURE
RANGE
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–25
°
C to +85
°
C
–55
°
C to +125
°
C
CONTINUOUS
CURRENT
5A at 25
°
C
5A at 25
°
C
5A at 25
°
C
5A at 25
°
C
PRODUCT
PACKAGE
OPA541AP
OPA541AM
OPA541BM
OPA541SM
Power Plastic
TO-3
TO-3
TO-3
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, +V
S
to –V
S
............................................................... 80V
Output Current .............................................................................see SOA
Power Dissipation, Internal
(1)
...........................................................125W
Input Voltage: Differential ....................................................................
±
V
S
Common-mode.............................................................
±
V
S
Temperature: Pin solder, 10s ........................................................ +300
°
C
Junction
(1)
............................................................... +150
°
C
Temperature Range:
AM, BM SM
Storage .................................................................... –65
°
C to +150
°
C
Operating (case) ...................................................... –55
°
C to +125
°
C
AP
Storage ...................................................................... –40
°
C to +85
°
C
Operating (case) ........................................................ –25
°
C to +85
°
C
NOTE: (1) Long term operation at the maximum junction temperature will
result in reduced product life. Derate internal power dissipation to achieve
high MTTF.
PACKAGE INFORMATION
PACKAGE DRAWING
NUMBER
(1)
PRODUCT
PACKAGE
OPA541AP
OPA541AM
OPA541BM
OPA541SM
Power Plastic
TO-3
TO-3
TO-3
242
030
030
030
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
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