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參數(shù)資料
| 型號(hào)： | OP599 |
| 廠商： | Optek Technology |
| 英文描述： | NPN Plastic Silicon Phototransistors |
| 中文描述： | npn型硅光敏塑料 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 426K |
| 代理商： | OP599 |
Fea ures
Variety of sensitivity ranges
T-1 3/4 package style
De scrip ion
The OP599 series phototransistor
consists of an NPN silicon
phototransistor mounted in a dark blue
plastic injection molded shell package.
The narrow receiving angle provides
excellent on-axis coupling. The sensors
are 100% production tested for close
correlation with Optek GaAlAs emitters.
Optek’s packaging process provides
excellent optical and mechanical axis
alignment. The shell also provides
excellent optical lens surface, control of
chip placement, and consistency of the
outside package dimensions.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Con inu ous Col ec or Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ng Tem pera ure (1/16 inch [1.6 mm] from case for 5 sec. with
sol der ng iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/
o
C above 25
o
C.
(3) V
CE
= 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission
wavelength of 890 nm and E
e(APT)
of .25 mW/cm
2
.
(4) This dimension is held to within
±
0.005" on the flange edge and may vary up to
±
0.020" in
the area of the leads.
Typi cal Per orm ance Curves
Prod uct Bul e in OP599
June 1996
NPN Plas ic Sili con Pho o ran sis ors
Type OP599 Se ies
Typi cal Spec ral Re sponse
Wave ength - nm
3-34
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972)323- 2396
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP599A | NPN Plastic Silicon Phototransistors |
| OP599B | NPN Plastic Silicon Phototransistors |
| OP599C | NPN Plastic Silicon Phototransistors |
| OP599D | NPN Plastic Silicon Phototransistors |
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| OP599A | 功能描述:光電晶體管 PHOTOSENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP599B | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP599C | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP599D | 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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