V
參數(shù)資料
型號(hào): OP37GSZ-REEL7
廠商: Analog Devices Inc
文件頁(yè)數(shù): 12/16頁(yè)
文件大小: 0K
描述: IC OPAMP GP 63MHZ LN PREC 8SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 通用
電路數(shù): 1
轉(zhuǎn)換速率: 17 V/µs
增益帶寬積: 63MHz
電流 - 輸入偏壓: 15nA
電壓 - 輸入偏移: 30µV
電壓 - 電源,單路/雙路(±): ±4 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
REV. B
OP37
–5–
Wafer Test Limits
OP37NT
OP37N
OP37GT
OP37G
OP37GR
Parameter
Symbol
Conditions
Limit
Unit
Input Offset
Voltage
VOS
Note 1
60
35
200
60
100
mV MAX
Input Offset
Current
IOS
50
35
85
50
75
nA MAX
Input Bias
Current
IB
±60
±40
±95
±55
±80
nA MAX
Input Voltage
Range
IVR
±10.3
±11
±10.3
±11
V MIN
Common Mode
Rejection Ratio
CMRR
VCM =
±11 V 108
114
100
106
100
dB MIN
Power Supply
Rejection Ratio
PSRR
TA = 25
∞C,
VS =
±4 V to
±18 V
10
1010
20
mV/V MAX
TA = 125
∞C,
VS =
±4.5 V to
±18 V
16
20
mV/V MAX
Large-Signal
Voltage Gain
AVO
RL
≥ 2 kW,
VO =
±10 V
600
1000
500
1000
700
V/mV MIN
RL
≥ 1 kW,
VO =
±10 V
800
V/mV MIN
Output Voltage
Swing
VO
RL
≥ 2 kW±11.5
±12
±11
±12
±11.5
V MIN
RL
≥ 600 kW±10
±10
V MIN
Power
Consumption
Pd
VO = 0
140
170
mW MAX
NOTES
For 25
∞C characterlstics of OP37NT and OP37GT devices, see OP37N and OP37G characteristics, respectively.
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
(VS =
15 V, TA = 25 C for OP37N, OP37G, and OP37GR devices; TA = 125 C for OP37NT and OP37GT devices,
unless otherwise noted.)
BINDING DIAGRAM
1
2
3
4
6
8
7
1427U
1990
1. NULL
2. (–) INPUT
3. (+) INPUT
4. V–
6. OUTPUT
7. V+
8. NULL
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