參數(shù)資料
型號: OP294
廠商: OPTEK TECHNOLOGY INC
元件分類: 紅外LED
英文描述: GaAlAs Plastic Infrared Emitting Diode
中文描述: 4.955 mm, 1 ELEMENT, INFRARED LED, 890 nm
文件頁數(shù): 2/2頁
文件大?。?/td> 226K
代理商: OP294
Types OP294, OP299
Elec ri cal Char ac er s ics
(T
A
= 25
o
C un ess oth er wise noted)
Op ek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972)323- 2200 Fax (972)323- 2396
2-57
SYM BOL
PA RAME TER
MIN
TYP MAX UNITS
TEST CON DI TIONS
E
e(APT)
Apertured Radiant Incidence
OP294
OP299
0.50
0.15
1.50
0.45
mW/cm
2
mW/cm
2
I
F
= 5 mA
(4)
I
F
= 5 mA
(3)
V
F
Forward Voltage
1.50
V
I
F
= 5 mA
I
R
Reverse Current
10
μ
A
V
R
= 2 V
λ
p
Wavelength at Peak Emission
890
nm
I
F
= 10 mA
B
Spectral Bandwidth Between Half Power Points
80
nm
I
F
= 10 mA
λ
p/
T
Spectral Shift with Temperature
+0.18
nm/
o
C I
F
= Constant
θ
HP
Emission Angle at Half Power Points
OP294
OP299
50
20
Deg.
Deg.
I
F
= 10 mA
I
F
= 10 mA
t
r
Output Rise Time
500
ns
I
F(PK)
= 100 mA,
PW = 10
μ
s, D.C. = 10%
t
f
Output Fall Time
250
ns
相關(guān)PDF資料
PDF描述
OP299 GaAlAs Plastic Infrared Emitting Diode
OP297 GaAlAs Plastic Infrared Emitting Diode(鋁砷化鎵塑料封裝紅外發(fā)光二極管,窄入射模式,峰值前向電流1.0A)
OP295 GaAlAs Plastic Infrared Emitting Diode(鋁砷化鎵塑料封裝紅外發(fā)光二極管,窄入射模式,峰值前向電流5.0A)
OP296 GaAlAs Plastic Infrared Emitting Diode(鋁砷化鎵塑料封裝紅外發(fā)光二極管,窄入射模式,峰值前向電流2.0A)
OP298AA Plastic Infrared Emitting Diode
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