@ VS =" />
參數(shù)資料
型號: OP291GSZ
廠商: Analog Devices Inc
文件頁數(shù): 18/24頁
文件大小: 0K
描述: IC OPAMP GP R-R 3MHZ DUAL 8SOIC
標(biāo)準(zhǔn)包裝: 98
放大器類型: 通用
電路數(shù): 2
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 0.5 V/µs
增益帶寬積: 3MHz
電流 - 輸入偏壓: 30nA
電壓 - 輸入偏移: 80µV
電流 - 電源: 260µA
電流 - 輸出 / 通道: 16mA
電壓 - 電源,單路/雙路(±): 2.7 V ~ 12 V,±1.35 V ~ 6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 管件
產(chǎn)品目錄頁面: 768 (CN2011-ZH PDF)
OP191/OP291/OP491
Rev. E | Page 3 of 24
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
@ VS = 3.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
OP191G
VOS
80
500
μV
40°C ≤ TA ≤ +125°C
1
mV
OP291G/OP491G
VOS
80
700
μV
40°C ≤ TA ≤ +125°C
1.25
mV
Input Bias Current
IB
30
65
nA
40°C ≤ TA ≤ +125°C
95
nA
Input Offset Current
IOS
0.1
11
nA
40°C ≤ TA ≤ +125°C
22
nA
Input Voltage Range
0
3
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 2.9 V
70
90
dB
40°C ≤ TA ≤ +125°C
65
87
dB
Large Signal Voltage Gain
AVO
RL = 10 kΩ, VO = 0.3 V to 2.7 V
25
70
V/mV
40°C ≤ TA ≤ +125°C
50
V/mV
Offset Voltage Drift
VOS/T
1.1
μV/°C
Bias Current Drift
IB/T
100
pA/°C
Offset Current Drift
IOS/T
20
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 kΩ to GND
2.95
2.99
V
40°C to +125°C
2.90
2.98
V
RL = 2 kΩ to GND
2.8
2.9
V
40°C to +125°C
2.70
2.80
V
Output Voltage Low
VOL
RL = 100 kΩ to V+
4.5
10
mV
40°C to +125°C
35
mV
RL = 2 kΩ to V+
40
75
mV
40°C to +125°C
130
mV
Short-Circuit Limit
ISC
Sink/source
±8.75
±13.50
mA
40°C to +125°C
±6.0
±10.5
mA
Open-Loop Impedance
ZOUT
f = 1 MHz, AV = 1
200
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 12 V
80
110
dB
40°C ≤ TA ≤ +125°C
75
110
dB
Supply Current/Amplifier
ISY
VO = 0 V
200
350
μA
40°C ≤ TA ≤ +125°C
330
480
μA
DYNAMIC PERFORMANCE
Slew Rate
+SR
RL = 10 kΩ
0.4
V/μs
Slew Rate
–SR
RL = 10 kΩ
0.4
V/μs
Full-Power Bandwidth
BWP
1% distortion
1.2
kHz
Settling Time
tS
To 0.01%
22
μs
Gain Bandwidth Product
GBP
3
MHz
Phase Margin
θO
45
Degrees
Channel Separation
CS
f = 1 kHz, RL = 10 kΩ
145
dB
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
2
μV p-p
Voltage Noise Density
en
f = 1 kHz
30
nV/√Hz
Current Noise Density
in
0.8
pA/√Hz
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