OP184/OP284/OP484
Rev. J | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
VOS
65
μV
40°C ≤ TA ≤ +125°C
165
μV
VOS
125
μV
40°C ≤ TA ≤ +125°C
350
μV
VOS
75
μV
–40°C ≤ TA ≤ +125°C
175
μV
VOS
150
μV
–40°C ≤ TA ≤ +125°C
450
μV
Input Bias Current
IB
60
450
nA
–40°C ≤ TA ≤ +125°C
600
nA
Input Offset Current
IOS
2
50
nA
–40°C ≤ TA ≤ +125°C
50
nA
Input Voltage Range
0
5
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 5 V
60
dB
VCM = 1.0 V to 4.0 V, 40°C ≤ TA ≤ +125°C
86
dB
Large Signal Voltage Gain
AVO
RL = 2 k, 1 V ≤ VO ≤ 4 V
50
240
V/mV
RL = 2 k, 40°C ≤ TA ≤ +125°C
25
V/mV
Bias Current Drift
ΔIB/ΔT
150
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1.0 mA
4.80
V
Output Voltage Low
VOL
IL = 1.0 mA
125
mV
Output Current
IOUT
±6.5
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.0 V to 10 V, 40°C ≤ TA ≤ +125°C
76
dB
Supply Current/Amplifier
ISY
VO = 2.5 V, 40°C ≤ TA ≤ +125°C
1.45
mA
Supply Voltage Range
VS
3
36
V
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
1.65
2.4
V/s
Settling Time
tS
To 0.01%, 1.0 V step
2.5
s
Gain Bandwidth Product
GBP
3.25
MHz
Phase Margin
ΦM
45
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.3
μV p-p
Voltage Noise Density
en
f = 1 kHz
3.9
nV/√Hz
Current Noise Density
in
0.4
pA/√Hz
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.