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參數(shù)資料
| 型號： | ON1179 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 59K |
| 代理商： | ON1179 |
1
Transmissive Photosensors (Photo Interrupters)
CNZ1179
(ON1179)
Photo Interrupter
*9.75
±
0.3
*2.54
±
0.3
Mark for indicating
LED side
13.0
±
0.3
5.0
±
0.2
2-R0.5
6.2
±
0.2
0.45
±
0.1
2
±
0
1
±
0
7
2
±
0
7
±
0
2-0.45
2
3
1
4
Pin connection
Unit : mm
2
3
1
4
(Note) * is dimension at the root of leads
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
For contactless SW, object detection
Features
Highly precise position detection : 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response : t
r
, t
f
= 6
μ
s (typ.)
Small output current variation against change in temperature
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
–30 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
3
50
75
20
30
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Collector cutoff current
characteristics
Collector to emitter capacitance
Collector current
Response time
Symbol
V
F
I
R
I
CEO
C
C
I
C
t
r
, t
f*
Conditions
min
typ
1.2
max
1.5
10
200
Unit
V
μ
A
nA
pF
mA
μ
s
V
Input
I
F
= 50mA
V
R
= 3V
V
CE
= 10V
V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
F
= 20mA, R
L
= 100
V
CC
= 10V, I
C
= 1mA, R
L
= 100
Output
5
Transfer
characteristics
0.3
6
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.3
*
Switching time measurement circuit
*1
Input power derating ratio is
1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
≥
25C.
Overview
CNZ1179 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Note) The part number in the parenthesis shows conventional part number.
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