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| 型號： | ON1004 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | ON1004 |
1
Transmissive Photosensors (Photo Interrupters)
CNZ1002
(ON1002)
Photo Interrupter
3.8
4.0
+0.1
1.45
1.45
(C0.3)
(C0.5)
0.9
*2.54
*2.54
2-0.25
1
3
2
4
2-0.4
2
(
5
3
4
Device
center
Gat0.3 max.
N
1
(Note)
1. Tolerance unless otherwise specified is
±
0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
1.5
+0.1
–0
A'
A
SEC. A-A'
Slit width
(0.5)
(
Unit : mm
Pin connection
2
4
1
3
more than 1mm
Soldering bath
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
For contactless SW, object detection
Overview
CNZ1002 is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Symbol
V
F
I
R
I
CEO
I
C
Conditions
min
typ
1.2
max
1.4
10
100
480
0.4
Unit
V
μ
A
nA
μ
A
V
μ
s
Input
I
F
= 20mA
V
R
= 3V
V
CE
= 20V
V
CE
= 5V, I
F
= 1.5mA
Output characteristics
Collector cutoff current
Collector current
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 3mA, I
C
= 30
μ
A
Response time
Transfer
characteristics
65
t
r
, t
f*
V
CC
= 5V, I
C
= 0.1mA, R
L
= 1000
35
*
Switching time measurement circuit
Features
Ultraminiature : 4.0
×
3.8 mm (height : 5.1 mm)
Fast response : t
r
, t
f
= 35
μ
s (typ.)
Highly precise position detection : 0.25 mm
Gap width : 0.9 mm
*1
Input power derating ratio is
1.0mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.0mW/C at Ta
≥
25C.
*3
Soldering time is within 5 seconds.
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
– 40 to +100
T
sol*3
Unit
V
mA
mW
mA
V
V
mW
C
C
C
Input (Light
emitting diode)
6
50
75
20
35
6
75
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Temperature
Storage temperature
Soldering temperature
260
Note) The part number in the parenthesis shows conventional part number.
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