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參數(shù)資料
| 型號(hào)： | OM6N100SW |
| 英文描述： | 1000V Single N-Channel Hi-Rel MOSFET in a D3 package |
| 中文描述： | 1000V單個(gè)N -溝道高可靠性的D3的封裝MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | OM6N100SW |
3.1 - 15
3.1
1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package
4 11 R1
Supersedes 2 05 R0
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM1N100SA
OM3N100SA
OM5N100SA
OM6N100SA
OM3N100ST
OM1N100ST
OM1N100ST
OM3N100ST
OM5N100SA
OM6N100SA
OM1N100SA
OM3N100SA
R
DS(on)
8.0
5.2
3.0
2.0
5.4
8.2
I
D
1.0A
3.5A
5.0A
6.0A
3.5A
1.0A
SCHEMATIC
DRAIN
GATE
SOURCE
PIN CONNECTION
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1 2 3
1
2 3
TO-254AA
TO-257AA
相關(guān)PDF資料 |
PDF描述 |
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| OM5N100SA | 1000V, 5.0 Amp, N-Channel MOSFET(1000V, 5.0 A，N溝道MOS場(chǎng)效應(yīng)管) |
| OM6N100SA | 1000V, 6.0 Amp, N-Channel MOSFET(1000V, 6.0 A，N溝道MOS場(chǎng)效應(yīng)管) |
| OM1N100SA | 1000V, 1.0 Amp, N-Channel MOSFET(1000V, 1.0 A，N溝道MOS場(chǎng)效應(yīng)管) |
| OM1N100ST | 1000V, 1.0 Amp, N-Channel MOSFET(1000V, 1.0 A，N溝道MOS場(chǎng)效應(yīng)管) |
| OM3N100SA | 1000V, 3.5 Amp, N-Channel MOSFET(1000V, 3.5 A，N溝道MOS場(chǎng)效應(yīng)管) |
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