參數(shù)資料
型號(hào)： OM6N100SA
英文描述： 1000V, 6.0 Amp, N-Channel MOSFET(1000V, 6.0 A，N溝道MOS場(chǎng)效應(yīng)管)
中文描述： 1000V的6.0安培，N通道MOSFET（1000V的6.0膫n溝道馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 40K
代理商： OM6N100SA
3
3
O
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM1N100SA
(See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage
Drain Current
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM3N100SA
(See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
1000
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max.
V
GS
= 10 V
V
GS
= 10 V
I
D
=.5A
V
GS
= 10 V
I
D
=.5A, T
C
= 100° C
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS,
I
D
= 250
m
A
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 x Max. Rat.,
V
GS
= 0, T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
Max
V
GS
= 10 V
V
GS
= 10 V
I
D
=.5A
V
GS
= 10 V
I
D
=.5A, T
C
= 100° C
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
I
D(on)
On-State Drain Current
1.0
A
I
D(on)
On-State Drain Current
3.5
A
R
DS(on)
Static Drain-Source On-State
Resisitance
1, 3
Static Drain-Source On-State
Resistance
1, 3
SA
ST
SA
ST
8.0
8.2
15.0
15.4
R
DS(on)
Static Drain-Source On-State
Resistance
1, 3
Static Drain-Source On-State
Resistance
1, 3
SA
ST
SA
ST
5.2
5.4
10.0
10.4
R
DS(on)
R
DS(on)
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
S
pF
pF
pF
ns
ns
ns
ns
V
DS
= 10V, I
D
= 1 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
S
pF
pF
pF
ns
ns
ns
ns
V
DS
= 10, I
D
= 1.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
950
110
40
90
90
115
75
950
110
40
90
90
115
75
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
2
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
2
t
rr
Reverse Recovery Time
3.5
A
Modified MOSPOWER
3.5
A
Modified MOSPOWER
symbol showing
symbol showing
14
A
the integral P-N
14
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
I
F
= I
S
, V
DD
= 100 V
dl
F
/ds = 100 A/
m
s, T
J
= 150 C
Junction rectifier.
T
C
= 25 C, I
S
= 3.5 A, V
GS
= 0
I
F
= I
S
, V
DD
= 100 V
dl
F
/ds = 100 A/
m
s, T
J
= 150 C
2.5
V
ns
2.5
V
ns
900
900
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3
OM1N100ST - All characteristics the same except R
DS(on)
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
1.5%.
2
Pulse Width limited by safe operating area.
3
OM3N100ST - All characteristics the same except R
DS(on)
V
DD
= 600 V,
I
D
= 3.5
RG= 50
W,
VGS
=
10 V
VDD= 600 V, ID= 3.5
RG= 50
W,
VGS= 10 V
G
D
S
G
D
S
相關(guān)PDF資料
PDF描述
OM1N100SA 1000V, 1.0 Amp, N-Channel MOSFET(1000V, 1.0 A，N溝道MOS場(chǎng)效應(yīng)管)
OM1N100ST 1000V, 1.0 Amp, N-Channel MOSFET(1000V, 1.0 A，N溝道MOS場(chǎng)效應(yīng)管)
OM3N100SA 1000V, 3.5 Amp, N-Channel MOSFET(1000V, 3.5 A，N溝道MOS場(chǎng)效應(yīng)管)
OM3N100ST 1000V, 3.5 Amp, N-Channel MOSFET(1000V, 3.5 A，N溝道MOS場(chǎng)效應(yīng)管)
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