參數(shù)資料
型號(hào): OM6516SC
廠商: Electronic Theatre Controls, Inc.
英文描述: 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package
中文描述: 1000伏,25安培,N溝道在全封閉金屬包裝IGBT的
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 20K
代理商: OM6516SC
O
3
2
PRELIMINARY DATA: OM6516SC
IGBT CHARACTERISTICS
Parameter - OFF
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
Min. Typ. Max. Units Test Conditions
1000
V
V
CE
= 0
I
C
= 250 μA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
V
GE
= ±20 V
V
CE
= 0 V
0.25
1.0
mA
mA
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
Forward Transductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Switching-Resistive Load
T
d(on)
Turn-On Time
t
r
Rise Time
T
d(off)
Turn-Off Delay Time
t
f
Fall Time
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
off
Turn-Off Losses
±100
nA
4.5
6.5
V
V
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 15 V, I
C
= 15 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 15 A
T
C
= 125°C
3.0
4.0
4.5
V
5.5
S
pF
pF
pF
V
CE
= 20 V, I
C
= 15 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
2000
160
65
50
200
200
300
nS
nS
nS
nS
V
CC
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
200
200
1.5
nS
nS
mWs L = 1 mH, T
j
= 125°C
V
CEclamp
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3
PRELIMINARY DATA: OM6520SC
IGBT CHARACTERISTICS
Parameter - OFF
(see Note 1)
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
Min. Typ. Max. Units Test Conditions
1000
V
V
CE
= 0
I
C
= 250 μA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
V
GE
= ±20 V
V
CE
= 0 V
0.25
1.0
mA
mA
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
Forward Transductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Switching-Resistive Load
T
d(on)
Turn-On Time
t
r
Rise Time
T
d(off)
Turn-Off Delay Time
t
f
Fall Time
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
off
Turn-Off Losses
DIODE CHARACTERISTICS
V
f
Maximum Forward Voltage
±100
nA
4.5
6.5
V
V
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 15 V, I
C
= 15 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 15 A
T
C
= 125°C
3.0
4.0
4.5
V
5.5
S
pF
pF
pF
V
CE
= 20 V, I
C
= 15 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
2000
160
65
50
200
200
300
nS
nS
nS
nS
V
CC
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
200
200
1.5
nS
nS
mWs L = 1 mH, T
j
= 125°C
V
CEclamp
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3
1.85
1.70
500
7.0
50
V
V
μA
mA
nS
I
F
= 30 A, T
C
= 25°C
I
F
= 30 A, T
C
= 150°C
V
R
= 1000 V, T
C
= 25°C
V
R
= 800 V, T
C
= 125°C
I
F
= 1 A, d
i
/ d
t
= -15 A μ/S
V
R
= 30 V, T
j
= 25°C
I
r
Maximum Reverse Current
t
rr
Reverse Recovery Time
Note 1: Limited by diode I
r
characteristic.
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