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參數(shù)資料
| 型號： | OM6111SW |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 400V單N溝道高可靠性的D3的封裝MOSFET的 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | OM6111SW |
OM6001ST - OM6104ST
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
OM6001ST OM6002ST OM6003ST OM6004ST
OM6101ST OM6102ST OM6103ST OM6104ST
Units
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25°C
Continuous Drain Current
2
±14
±9
±5.5
±4.5
A
I
D
@ T
C
= 100°C
Continuous Drain Current
2
±9
±6
±3.5
±3
A
I
DM
Pulsed Drain Current
1
±56
±36
±22
±18
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
50
50
50
50
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
20
20
20
20
W
Junction To Case
Linear Derating Factor
0.4
0.4
0.4
0.4
W/°C
Junction To Ambient
Linear Derating Factor
.015
.015
.015
.015
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 2%.
2 Package Pin Limitations
= 16 amps
THERMAL RESISTANCE (MAXIMUM) at T
A
= 25°C
R
thJC
Junction-to-Case
2.5
°C/W
R
thJA
Junction-to-Ambient
65
°C/W Free Air Operation
90
75
60
45
30
15
0
0
25
50
75 100 125 150 175
T
C
- CASE TEMPERATURE (C°)
P
D
R
θ
JC
= 2.5° C/W
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
POWER DERATING
MECHANICAL OUTLINE
WITH PIN CONNECTION
1 2 3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OM6112SW | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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