參數(shù)資料
型號： OM6109SW
英文描述： 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
中文描述： 100V的單個N -溝道高可靠性MOSFET的采用TO - 254AA封裝
文件頁數(shù)： 3/4頁
文件大小： 44K
代理商： OM6109SW
3
O
3
ELECTRICAL CHARACTERISTICS:
(
T
= 25°C unless otherwise noted)
STATIC P/N OM6103ST / OM6003ST (400V)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSS
Gate-Body Leakage (OM6103)
I
GSS
Gate-Body Leakage (OM6003)
I
DSS
Zero Gate Voltage Drain
0.1
Current
0.2
ELECTRICAL CHARACTERISTICS:
(
T
= 25°C unless otherwise noted)
STATIC P/N OM6104ST / OM6004ST (500V)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
500
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSS
Gate-Body Leakage (OM6104)
I
GSS
Gate-Body Leakage (OM6004)
I
DSS
Zero Gate Voltage Drain
0.1
Current
0.2
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
4.0
± 500
± 100
0.25
V
nA
nA
mA
4.0
± 500
± 100
0.25
V
nA
nA
mA
1.0
mA
1.0
mA
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
5.5
A
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
4.5
A
2.4
3.15
V
V
GS
= 10 V, I
D
= 3.0 A
3.25
4.00
V
V
GS
= 10 V, I
D
= 2.5 A
R
DS(on)
1.05
V
GS
= 10 V, I
D
= 3.0 A
R
DS(on)
1.6
V
GS
= 10 V, I
D
= 2.5 A
R
DS(on)
2.0
V
GS
= 10 V, I
D
= 3.0 A,
T
C
= 125 C
R
DS(on)
2.9
3.3
V
GS
= 10 V, I
D
= 2.5 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
3.0
3.6
700
70
20
18
20
40
25
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 3.0 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
@
3.0 A
R
g
= 10
W
,V
GS
= 10 V
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.5
2.8
700
90
30
18
20
42
25
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 2.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 225 V, I
D
@
2.5 A
R
g
= 7.5
W
, V
GS
= 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
- 5.5
A
Modified MOSPOWER
- 4.5
A
Modified MOSPOWER
symbol showing
symbol showing
- 22
A
the integral P-N
- 18
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -5.5 A, V
GS
= 0
T
C
= 25 C, I
S
= -4.5 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -4.5 A, V
GS
= 0
T
C
= 25 C, I
S
= -4 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 2.5
V
V
- 1.4
V
V
470
ns
430
ns
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
OM6110CSA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA
OM6110SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
OM6110SW 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200V Single N-Channel Hi-Rel MOSFET in a D3 package
OM6111CSA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-254AA
OM6111SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
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