參數(shù)資料
型號(hào)： OM6109SA
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 22A I(D) | TO-254AA
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 22A條（丁）|對(duì)254AA
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 44K
代理商： OM6109SA
3
O
3
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM6011SA / OM6111SA
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
GSS
Gate-Body Leakage (OM6111)
I
DSS
Zero Gate Voltage Drain
Current
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM6012SA / OM6112SA
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
500
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
GSS
Gate-Body Leakage (OM6112)
I
DSS
Zero Gate Voltage Drain
Current
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS,
I
D
= 250
m
A
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4 A
4.0
100
-100
± 500
0.25
1.0
V
nA
nA
nA
mA
mA
4.0
100
- 100
± 500
0.25
1.0
V
nA
nA
nA
mA
mA
0.1
0.2
0.1
0.2
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
10
A
V
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
8.0
A
V
2.35 2.75
3.2
3.4
R
DS(on)
0.47 0.55
V
GS
= 10 V, I
D
= 5 A
R
DS(on)
0.8
0.85
V
GS
= 10 V, I
D
= 4 A
R
DS(on)
0.93 1.10
V
GS
= 10 V, I
D
= 5 A,
T
C
= 125 C
R
DS(on)
1.50
1.65
V
GS
= 10 V, I
D
= 4 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
@
5 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 4 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
=
4 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
1150
165
70
17
12
45
30
1275
200
85
17
5
42
14
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
- 10
A
Modified MOSPOWER
- 8
A
Modified MOSPOWER
symbol showing
symbol showing
- 40
A
the integral P-N
- 32
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -10 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 2
V
ns
- 2
V
ns
530
700
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
相關(guān)PDF資料
PDF描述
OM6112SA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-254AA
OM6009SA 100V , 22Amp, N Channel MOSFET(100V , 22A,N溝道，MOS場(chǎng)效應(yīng)管)
OM6010SA 200V , 18Amp, N Channel MOSFET(200V , 18A,N溝道，MOS場(chǎng)效應(yīng)管)
OM6011SA 400V , 10Amp, N Channel MOSFET(400V , 10A,N溝道，MOS場(chǎng)效應(yīng)管)
OM6012SA 500V , 8Amp, N Channel MOSFET(500V , 8A,N溝道，MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
OM6109SW 制造商:未知廠家 制造商全稱:未知廠家 功能描述:100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
OM6110CSA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA
OM6110SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
OM6110SW 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200V Single N-Channel Hi-Rel MOSFET in a D3 package
OM6111CSA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-254AA
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